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11AA010T-I/TO 参数 Datasheet PDF下载

11AA010T-I/TO图片预览
型号: 11AA010T-I/TO
PDF下载: 下载PDF文件 查看货源
内容描述: [128 X 8 1-WIRE SERIAL EEPROM, PBCY3, ROHS COMPLIANT, PLASTIC, TO-92, 3 PIN]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
文件页数/大小: 48 页 / 747 K
品牌: MICROCHIP [ MICROCHIP ]
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11XX  
The following is a list of conditions under which the  
write enable latch will be reset:  
4.4  
Write Enable (WREN) and Write  
Disable (WRDI) Instructions  
• Power-up  
The 11XX contains a write enable latch. See Table 6-1  
for the Write-Protect Functionality Matrix. This latch  
must be set before any write operation will be com-  
pleted internally. The WREN instruction will set the  
latch, and the WRDIinstruction will reset the latch.  
WRDIinstruction successfully executed  
WRSRinstruction successfully executed  
WRITEinstruction successfully executed  
ERALinstruction successfully executed  
SETALinstruction successfully executed  
Note: The WRENand WRDIinstructions must  
be terminated with a NoMAK following  
the command byte. If a NoMAK is not  
received at this point, the command will  
be considered invalid, and the device  
will go into Idle mode without respond-  
ing with a SAK or executing the com-  
mand.  
FIGURE 4-4:  
WRITE ENABLE COMMAND SEQUENCE  
Device Address  
Standby Pulse  
Start Header  
SCIO  
0 1 0 1 0 1 0 1  
1 0 1 0 0 0 0 0(1)  
Command  
SCIO  
1 0 0 1 0 1 1 0  
Note 1: For the 11XXXX1, this bit must be a ‘1’.  
FIGURE 4-5: WRITE DISABLE COMMAND SEQUENCE  
Device Address  
Standby Pulse  
Start Header  
SCIO  
0 1 0 1 0 1 0 1  
1 0 1 0 0 0 0 0(1)  
Command  
SCIO  
1 0 0 1 0 0 0 1  
Note 1: For the 11XXXX1, this bit must be a ‘1’.  
2011 Microchip Technology Inc.  
DS22067J-page 13