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ML4813 参数 Datasheet PDF下载

ML4813图片预览
型号: ML4813
PDF下载: 下载PDF文件 查看货源
内容描述: 反激式功率因数控制器 [Flyback Power Factor Controller]
分类和应用: 控制器
文件页数/大小: 15 页 / 267 K
品牌: MICRO-LINEAR [ MICRO LINEAR CORPORATION ]
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ML4813  
APPLICATIONS (Continued)  
The output voltage "rides" on the input voltage when the  
(+) output is measured with respect to PWR GND as  
shown in Figure 10.  
The extra op amp provided in the ML4813 can be used to  
sense the output voltage for regulation and overvoltage  
conditions. This op amp is connected as a difference  
amplifier with its output referenced to PWR GND.  
Resistors RH1, RH2, RL1, RL2 are used to scale down the  
voltage.  
V
V
OUT+  
OUT  
200V  
V
OUT-  
PWR GND  
Normally, RH1 = RH2 = RH and RL1 = RL2 = RL. The  
TIME  
voltage designated as V in Figure 7 is given by:  
S
RL  
RH + RL  
Figure 10. Output Voltage with Respect to PWR GND  
VS = VOUT  
™
(16)  
The output capacitance should be calculated such that it  
has the required output ripple at the worst case operating  
point. In addition, the ESR should be sufficiently low to  
prevent excessive dissipation due to RMS currents. The  
first criterion can be met by choosing the value of the  
output capacitor based on the following:  
Where:  
I
= Total RMS current through the power MOSFET  
RMS  
f = Line frequency times 2 (120 for 60Hz line)  
L
r = f  
/f  
SWITCH L  
Table 1 is provided to assist in calculating (18). When the  
power switch is a bipolar transistor (constant V drop),  
then the power dissipation produced can be calculated  
by:  
CE  
P
IN  
COUT  
˜
(17)  
2pfL ™ DVR ™ VOUT  
0.9 ™ P  
VRMS  
Where:  
IN  
PD =  
™ VCE  
(19)  
C
= Total output capacitance  
OUT  
P
= Total input power  
IN  
DV = Peak output capacitor ripple voltage  
Where:  
P = Power dissipation in the transistor  
R
f = Line frequency times 2 (120 for 60Hz line)  
L
D
V
V
= RMS value of the minimum input voltage  
= Forward drop of the power transistor  
RMS  
CE  
The second criterion for the selection of the output  
capacitor can be satisfied by choosing a component with  
adequately low ESR value that can safely bypass the RMS  
currents.  
r
kp  
r
sin2  
f
SWITCH  
Ê
k
1
(kHz)  
r
OUTPUT DIODE  
20  
30  
167  
250  
9.1  
The output diode can be a "fast" or ultrafast' type  
depending on the operating frequency. Reverse recovery  
losses are low since under normal operating conditions,  
the regulator operates in discontinuous current mode. The  
diode should be rated to handle the maximum output  
current. The resulting power dissipation will be the  
forward drop of the diode times the output current.  
11.2  
12.9  
14.4  
25.8  
17.1  
18.3  
19.4  
20.4  
21.4  
22.4  
23.3  
24.2  
25.0  
25.7  
26.5  
27.3  
28.0  
28.9  
40  
333  
50  
417  
60  
500  
70  
583  
80  
667  
90  
750  
100  
110  
120  
130  
140  
150  
160  
170  
180  
190  
200  
833  
POWER SWITCH  
917  
1000  
1083  
1167  
1250  
1333  
1417  
1500  
1583  
1667  
If a power MOSFET is used, it should be sized for the  
required efficiency. Lower R  
devices will yield  
DS(ON)  
lower losses, but if they are operated at high frequencies  
(100kHz), higher charge dumping losses will be  
experienced. The RMS current value through the power  
FET and the sensing resistor is:  
r
3
L ™ IP ™ fL  
kp  
r
IRMS  
=
™
sin2  
(15)  
Ê
4.24 ™ VRMS  
k
1
Table 1. Constants for Calculating IRMS (Equation 18)  
11