MICRO
ELECTRONICS
2SD1616A
NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
4.68
(0.18)
4.6
(0.18)
0.51
(0.02)
TO-92B
3.58
B CE
(0.14)
10
0.4
(0.016)
12.7
(0.5)
min.
2.54
(0.1)
Bottom view
Unit: mm(inch)
0.45
(0.018)
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Power Dissipation @ Ta=25
o
C
Operating & Storage Junction Temperature
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
,T
stg
60V
120V
6V
1A
0.65W
-55 to +150
o
C
ELECTRICAL CHARACTERISTICS (Ta=25
o
C)
SYMBOL
I
CBO
I
EBO
H
FE *
H
FE *
V
BE *
V
CE(sat) *
V
BE(sat) *
C
ob
Output Capacitance
f
T
Gain Bandwidth Product
Turn-On Time
t
on
t
stg
Storage Time
t
f
Fall Time
* Pulse test PW
≦
350µs, duty cycle
≦
2%.
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain
D.C. Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MIN
MAX
100
100
350
700
0.5
1.2
TYP.
TYP.
TYP.
TYP.
UNIT
CONDITIONS
nA V
CB
=60V I
E
=0
nA V
EB
=6V
I
C
=0
V
CE
=2V
I
C
=100mA
V
CE
=2V
I
C
=1A
mV V
CE
=2V
I
C
=50mA
V
I
C
=1A
I
B
=50mA
V
I
C
=1A
I
B
=50mA
pF V
CB
=10V I
E
=0
I
C
=100mA
MHz V
CE
=2V
µs
Vcc=10V I
C
=100mA
µs
I
B1
=-I
B2
=10mA
µs
V
BE(off)
=-2 to 3V
170
45
600
19
100
0.07
0.95
0.07
MICRO ELECTRONICS LTD.
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk
MICRO-ELECTRONICS [ Micro Electronics ]
