欢迎访问ic37.com |
会员登录 免费注册
发布采购

MIC5012BWM 参数 Datasheet PDF下载

MIC5012BWM图片预览
型号: MIC5012BWM
PDF下载: 下载PDF文件 查看货源
内容描述: 双高或低侧MOSFET驱动器不推荐用于新设计 [Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs]
分类和应用: 驱动器
文件页数/大小: 9 页 / 106 K
品牌: MICREL [ MICREL SEMICONDUCTOR ]
 浏览型号MIC5012BWM的Datasheet PDF文件第1页浏览型号MIC5012BWM的Datasheet PDF文件第2页浏览型号MIC5012BWM的Datasheet PDF文件第4页浏览型号MIC5012BWM的Datasheet PDF文件第5页浏览型号MIC5012BWM的Datasheet PDF文件第6页浏览型号MIC5012BWM的Datasheet PDF文件第7页浏览型号MIC5012BWM的Datasheet PDF文件第8页浏览型号MIC5012BWM的Datasheet PDF文件第9页  
MIC5012
Micrel
Electrical Characteristics
(Note 3) Test circuit. T
A
= –55°C to +125°C, V
+
= 15V
, all switches open, unless
otherwise specified.
Parameter
Supply Current
(per section)
V
+
= 5V
Logic Input Voltage
V
+
= 4.75V
Conditions
V
+
= 32V
V
IN
= 0V, S2 closed
V
IN
= V
S
= 32V
V
IN
= 5V, S2 closed
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
V
+
= 15V
Logic Input Current, I
2
Input Capacitance
Gate Drive, V
GATE
Zener Clamp,
V
GATE
– V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
Gate Turn-off Time, t
OFF
Note 1
Note 2
Note 3
Note 4
Min
Typical
0.1
8
1.6
Max
10
20
4
2
Units
µA
mA
mA
V
V
V
µA
µA
pF
V
V
4.5
5.0
–1
1
5
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
V
+
= 32V
Pins 11, 14
S1, S2 closed,
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
V
+
= 4.75V, I
GATE
= 0, V
IN
= 4.5V
V
+
= 15V, I
GATE
= 100µA, V
IN
= 5V
V
+
= 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
7
24
11
11
10
27
12.5
13
60
4
15
16
200
10
V
V
µs
µs
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings.
The MIC5012 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the entire
range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information.
Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical
values shown.
Test Circuit
V+
+ 1µF
1/2 MIC5012
V+
Input
V
GATE
Gate
1nF S1
V
IN
500Ω
1W
S2
VS
Source
Gnd
I
GATE
5-116
April 1998