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MIC5012 参数 Datasheet PDF下载

MIC5012图片预览
型号: MIC5012
PDF下载: 下载PDF文件 查看货源
内容描述: 双高或低侧MOSFET驱动器不推荐用于新设计 [Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs]
分类和应用: 驱动器
文件页数/大小: 9 页 / 106 K
品牌: MICREL [ MICREL SEMICONDUCTOR ]
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MIC5012
Micrel
Absolute Maximum Ratings
(Note 1, 2)
Supply Voltage (V
+
), Pins 10, 12
Input Voltage, Pins 11, 14
Source Voltage, Pins 2, 5
Current into Pins 2, 5
Gate Voltage, Pins 4, 6
Junction Temperature
–0.5V to 36V
–10V to V
+
–10V to V
+
50mA
–1V to 50V
150°C
Operating Ratings
(Notes 1, 2)
Power Dissipation
1.56W
θ
JA
(Plastic DIP)
80
°C/W
θ
JA
(SOIC)
105°C/W
Ambient Temperature: B version
–40°C to +85°C
Storage Temperature
–65°C to +150°C
Lead Temperature
260°C
(Soldering, 10 seconds)
Supply Voltage (V
+
), Pin 1
4.75V to 32V high side
4.75V to 15V low side
Pin Description
(Refer to
Typical Applications)
DIP Pin Number
12, 10
14, 11
2, 5
3
4, 6
Pin Name
V
+
Input
Source
Ground
Gate
Drives and clamps the gate of the power FET. Clamped to approximately –
0.7V by an internal diode when turning off inductive loads.
Pin Function
Supply; must be decoupled to isolate from large transients caused by the
power FET drain. 10µF is recommended close to pins 1 and 4.
Turns on power MOSFET when taken above threshold (3.5V typical).
Requires <1
µA
to switch.
Connects to source lead of power FET and is the return for the gate clamp
zener. Can safely swing to –10V when turning off inductive loads.
5
Pin Configuration
MIC5012 (N, J)
1
2
3
4
5
6
7
NC
Source A
Gnd
Gate A
Source B
Gate B
NC
Input A
NC
V+ A
Input B
V+ B
NC
NC
MIC5012 (WM)
1
2
3
4
5
6
7
8
NC
Source A
Gnd
Gate A
Source B
Gate B
NC
NC
Input A
NC
V+ A
Input B
V+ B
NC
NC
NC
14
13
12
11
10
9
8
16
15
14
13
12
11
10
9
April 1998
5-115