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MIC4423 参数 Datasheet PDF下载

MIC4423图片预览
型号: MIC4423
PDF下载: 下载PDF文件 查看货源
内容描述: 双路3A峰值低侧MOSFET驱动器双极/ CMOS / DMOS工艺 [Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process]
分类和应用: 驱动器
文件页数/大小: 12 页 / 120 K
品牌: MICREL [ MICREL SEMICONDUCTOR ]
 浏览型号MIC4423的Datasheet PDF文件第4页浏览型号MIC4423的Datasheet PDF文件第5页浏览型号MIC4423的Datasheet PDF文件第6页浏览型号MIC4423的Datasheet PDF文件第7页浏览型号MIC4423的Datasheet PDF文件第8页浏览型号MIC4423的Datasheet PDF文件第9页浏览型号MIC4423的Datasheet PDF文件第11页浏览型号MIC4423的Datasheet PDF文件第12页  
MIC4423/4424/4425  
= 12 x [(0.5 x 0.0035) + (0.5 x 0.0003)]  
Micrel  
= 0.213W  
= 0.0228W  
In a ceramic package with an θ of 100°C/W, this amount of  
JA  
Total power dissipation, then, is:  
power results in a junction temperature given the maximum  
40°C ambient of:  
P
= 0.2160 + 0.0066 + 0.0228  
= 0.2454W  
D
(0.213 x 100) + 40 = 61.4°C  
Assuming an SOIC package, with an θ of 120°C/W, this will The actual junction temperature will be lower than calculated  
JA  
result in the junction running at:  
both because duty cycle is less than 100% and because the  
graph lists R at a T of 125°C and the R at 61°C  
T will be somewhat lower.  
J
DS(on)  
J
DS(on)  
0.2454 x 120 = 29.4°C  
aboveambient,which,givenamaximumambienttemperature  
of 60°C, will result in a maximum junction temperature of  
89.4°C.  
Definitions  
C = Load Capacitance in Farads.  
L
D = Duty Cycle expressed as the fraction of time the input  
to the driver is high.  
EXAMPLE 2: A MIC4424 operating on a 15V input, with one  
driver driving a 50resistive load at 1MHz, with a duty cycle  
of67%, andtheotherdriverquiescent, inamaximumambient  
temperature of 40°C:  
f = Operating Frequency of the driver in Hertz  
I = Power supply current drawn by a driver when both  
H
2
P = I x R x D  
L
O
inputs are high and neither output is loaded.  
First, I must be determined.  
O
I = Power supply current drawn by a driver when both  
L
inputs are low and neither output is loaded.  
I
O
= V / (R + R  
)
S
O
LOAD  
I = Output current from a driver in Amps.  
D
Given R from the characteristic curves then,  
O
P = Total power dissipated in a driver in Watts.  
D
I
= 15 / (3.3 + 50)  
= 0.281A  
O
P = Power dissipated in the driver due to the driver’s load  
L
I
O
in Watts.  
and:  
P
= Power dissipated in a quiescent driver in Watts.  
Q
2
P
L
= (0.281) x 3.3 x 0.67  
P = Powerdissipatedinadriverwhentheoutputchanges  
T
= 0.174W  
states (“shoot-through current”) in Watts. NOTE: The  
“shoot-through” current from a dual transition (once  
up, once down) for both drivers is stated in the graph  
on the following page in ampere-nanoseconds. This  
figure must be multiplied by the number of repetitions  
per second (frequency to find Watts).  
P
= F x V x (A•s)/2  
T
S
(because only one side is operating)  
–9  
= (1,000,000 x 15 x 3.3 x 10 ) / 2  
= 0.025 W  
and:  
R = Output resistance of a driver in Ohms.  
P
Q
= 15 x [(0.67 x 0.00125) + (0.33 x 0.000125) +  
(1 x 0.000125)]  
O
V = Power supply voltage to the IC in Volts.  
S
(this assumes that the unused side of the driver has its input  
grounded, which is more efficient)  
= 0.015W  
then:  
P
= 0.174 + 0.025 + 0.0150  
D
MIC4423/4424/4425  
10  
January 1999