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WME128K8-125CQA 参数 Datasheet PDF下载

WME128K8-125CQA图片预览
型号: WME128K8-125CQA
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM,]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件页数/大小: 12 页 / 648 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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WME128K8-XXX  
READ  
Figure 3 shows Read cycle waveforms. A read cycle begins with  
selection address, chip select and output enable. Chip select is  
accomplished by placing the CS# line low. Output enable is done  
by placing the OE# line low. The memory places the selected data  
byte on I/O0 through I/O7 after the access time. The output of the  
memory is placed in a high impedance state shortly after either  
the OE# line or CS# line is returned to a high level.  
FIGURE 3 – READ WAVEFORMS  
t RC  
ADDRESS VALID  
ADDRESS  
CS#  
tACS  
tOE  
OE#  
tDF  
tACC  
t OH  
HIGH Z  
OUTPUT  
VALID  
OUTPUT  
NOTE:  
OE# may be delayed up to tACS- tOE after the falling edge of CS#  
without impact on tOE or by tACC- tOE after an address change without impact on tACC.  
AC READ CHARACTERISTICS (See Figure 3)  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
-125  
-140  
-150  
-200  
-250  
-300  
Read Cycle Parameter  
Read Cycle Time  
Symbol  
Unit  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
tRC  
tACC  
tACS  
125  
140  
150  
200  
250  
300  
ns  
ns  
ns  
Address Access Time  
125  
125  
140  
140  
150  
150  
200  
200  
250  
250  
300  
300  
Chip Select Access Time  
Output Hold from Address Change, OE#  
or CS#  
tOH  
0
0
0
0
0
0
ns  
Output Enable to Output Valid  
tOE  
tDF  
55  
63  
55  
70  
55  
70  
55  
70  
85  
70  
85  
70  
ns  
ns  
Chip Select or OE# to High Z Output  
3
4311.11E-0718-ss-WME128K8-XXX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com