1Mx32 3.3V NOR FLASH MODULE
WF1M32B-XXX3
FEATURES
Access Times of 100, 120, 150ns
Packaging
• 66 pin, PGA Type (H1), 1.075" square, Hermetic Ceramic
HIP (Package 404)
• 68 lead, Low Profile CQFP (G2U), 3.5mm (0.140") square
(Package 510)
1,000,000 Erase/Program Cycles
Sector Architecture
• One 16KByte, two 8KBytes, one 32KByte, and fifteen
64kBytes (each chip)
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
Organized as 1Mx32
Commercial, Industrial and Military Temperature Ranges
3.3 Volt for Read and Write Operations
Boot Code Sector Architecture (Bottom)
Low Power CMOS
Embedded Erase and Program Algorithms
Built-in Decoupling Caps for Low Noise Operation
Erase Suspend/Resume
• Supports reading data from or programing data to a
sector not being erased
Low Current Consumption
Typical values at 5MHz:
• 40mA Active Read Current
• 80mA Program/Erase Current
Weight
• WF1M32B-XG2UX3 -8 grams typical
• WF1M32B-XH1X3 -13 grams typical
Note: For programming information refer to Flash Programming 8M3 Application Note.
This product is subject to change without notice.
PIN CONFIGURATION FOR WF1M32B-XH1X3
TOP VIEW
I/O0-31
1
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
11
22
12
RESET#
CS2#
GND
I/O11
A10
A9
A15
V
CC
CS1#
A19
I/O3
33
23
I/O15
I/O14
I/O13
I/O12
OE#
A17
WE#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
NC
A13
A8
I/O16
I/O17
I/O18
44
34
V
CC
CS4#
NC
I/O27
A4
A5
A6
NC
CS3#
GND
I/O19
55
45
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
66
8
8
8
8
CS1#
RESET#
WE#
OE#
A0-19
CS2#
CS3#
CS4#
PIN DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Reset
Power Supply
Ground
Not Connected
A0-19
WE#
CS1-4#
OE#
RESET#
V
CC
GND
NC
56
BLOCK DIAGRAM
1M x 8
1M x 8
1M x 8
1M x 8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
1
4337.17E-0816-ss-WF1M32B-XXX3