WF128K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Unit
°C
Parameter
Symbol
Min
4.5
-55
-40
0
Max
5.5
Unit
V
Operating Temperature
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Supply Voltage
VCC
TA
Supply Voltage Range (VCC
)
V
Operating Temp. (Mil, Q)
Operating Temp. (Ind)
Operating Temp. (Com)
+125
+85
°C
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
V
TA
°C
°C
TA
+70
°C
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
°C
10
years
cycles
V
Endurance (write/erase cycles) Mil Temp
A9 Voltage for sector protect (VID) (3)
NOTES:
100,000 min
-2.0 to +12.5
CAPACITANCE
Ta = +25°C
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is Vcc + 0.5V. During voltage transitions, outputs may overshoot to VCC + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
Parameter
Symbol
COE
CWE
Conditions
VIN = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
Max Unit
OE# capacitance
WE1-4# capacitance
HIP (PGA) H1
50
pF
pF
20
15
20
20
50
CQFP G2U/G2L
CS1-4# capacitance
Data# I/O capacitance
Address input capacitance
CCS
CI/O
CAD
VIN = 0V, f = 1.0 MHz
VI/O = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Symbol
ILI
Conditions
VCC = VCC MAX, VIN = GND to VCC
Min
Max
10
Unit
Input Leakage Current
Output Leakage Current
VCC Active Current for Read(1)
μA
μA
mA
mA
mA
mA
V
ILOx32
ICC1
ICC2
ICC3
ICC4
VIH
VCC = VCC MAX, VOUT = GND to VCC
CS# = VIL, OE# = VIH, VCC = VCC MAX
CS# = VIL, OE# = VIH, VCC = VCC MAX
VCC = VCC MAX, CS# = VCC ±0.5V, OE# = VIH, f = 5MHz
VCC = 5.5, CS# = VIH
10
140
V
CC Active Current for Program or Erase(2)
CC Standby Current
200
V
6.5
VCC Static Current
Input High Voltage
0.6
2.0
-0.5
11.5
VCC + 0.3
+0.8
12.5
0.45
Input Low Voltage
VIL
V
Voltage for Auto Select and Sector Protect
Output Low Voltage
Output High Voltage
Output High Voltage
Low VCC Lock Out Voltage
NOTES:
VID
V
VOL
VOH1
VOH2
VLKO
IOL = 8.0 mA, VCC = VCC MIN
IOH = -2.5 mA, VCC = VCC MIN
IOH = -100 μA, VCC = VCC MIN
V
0.85 x VCC
VCC -0.4
3.2
V
V
V
1.
2.
I
I
CC current is typically less than 8mA/MHz, with OE# at VIH
CC active while Embedded Algorithm (program or erase) is in progress.
.
3
4335.15E-0816-ss-WF128K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com