WF128K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
Parameter
Unit
°C
V
Supply Voltage
Operating Temperature
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
A9 Voltage for Sector Protect
2.0
VCC + 0.3
+0.8
V
Supply Voltage Range (VCC)
VIL
-0.5
-55
V
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
V
TA
+125
°C
V
°C
°C
VID
11.5
12.5
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
10 years
Endurance (write/erase cycles) Mil Temp
A9 Voltage for sector protect (VID) (3)
10,000 cycles min.
-2.0 to +14.0
CAPACITANCE
V
(TA = +25°C)
NOTES:
Parameter
Symbol
COE
Conditions
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
Max Unit
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
OE capacitance
V
V
50
pF
pF
WE1-4 capacitance
HIP (PGA)
CWE
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
20
50
20
15
CQFP G4T
CQFP G2
CQFP G2U
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0 V, f = 1.0 MHz
I/O = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Data I/O capacitance
Address input capacitance
V
V
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
Unit
Min
Max
10
Input Leakage Current
ILI
ILOx32
ICC1
VCC = 5.5, VIN = GND to VCC
VCC = 5.5, VIN = GND to VCC
CS = VIL, OE = VIH
µA
µA
Output Leakage Current
VCC Active Current for Read (1)
10
140
200
mA
mA
VCC Active Current for Program
or Erase (2)
ICC2
CS = VIL, OE = VIH
7
VCC Standby Current
VCC Static Current
Output Low Voltage
Output High Voltage
ICC3
ICC4
VOL
VCC = 5.5, CS = VIH, f = 5MHz
VCC = 5.5, CS = VIH
6.5
0.6
mA
mA
V
IOL = 12.0 mA, VCC = 4.5
0.45
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x
VCC
V
Output High Voltage
VOH2
VLKO
IOH = -100 µA, VCC = 4.5
VCC
-0.4
V
V
Low VCC Lock Out Voltage
3.2
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
3
White Microelectronics • Phoenix, AZ • (602) 437-1520
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
