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WEDPS512K32LV-17BI 参数 Datasheet PDF下载

WEDPS512K32LV-17BI图片预览
型号: WEDPS512K32LV-17BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX32, 17ns, CMOS, PBGA143, BGA-143]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 7 页 / 696 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
 浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第1页浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第3页浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第4页浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第5页浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第6页浏览型号WEDPS512K32LV-17BI的Datasheet PDF文件第7页  
WEDPS512K32V-XBX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
4.6  
Unit  
°C  
°C  
V
CS#  
H
OE#  
X
WE#  
X
Mode  
Standby  
Read  
Data I/O  
High Z  
Power  
Standby  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
L
L
H
Data Out  
Data In  
High Z  
L
X
L
Write  
Active  
TJ  
150  
°C  
V
L
H
H
Out Disable  
Active  
VCC  
-0.5  
4.6  
BGA THERMAL RESISTANCE  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
VCC  
Min  
3.0  
Max  
3.6  
Unit  
V
Parameter  
Junction to Ambient (No Airow)  
Symbol  
Theta JA  
Theta JB  
Theta JC  
Max  
16.9  
11.3  
9.8  
Unit  
°C/W  
°C/W  
°C/W  
Note  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
1
1
1
Junction to Ball  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
Junction to Case (Top)  
VIL  
-0.3  
V
NOTE: Refer to Application Note "PBGA Thermal Resistance Correlation" at  
www.whiteedc.com in the application notes section for modeling conditions.  
CAPACITANCE  
Ta = +25°C  
Parameter  
Symbol  
Conditions  
Max  
30  
Unit  
OE# capacitance  
COE  
CWE  
CCS  
CI/O  
CAD  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
VI/O = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
pF  
pF  
pF  
pF  
pF  
WE1-4# capacitance  
CS1-4# capacitance  
Data I/O capacitance  
Address input capacitance  
10  
10  
10  
30  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 3.3V ± 0.3V, -55°C TA +125°C  
Parameter  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current (x 32 Mode)  
Standby Current  
Symbol  
ILI  
Conditions  
Min  
Max  
10  
Units  
μA  
μA  
mA  
mA  
V
VIN = GND to VCC  
ILO  
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6V  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6V  
IOL = 4.0mA  
10  
I
CC x 32  
ISB  
400  
120  
0.4  
Output Low Voltage  
VOL  
Output High Voltage  
VOH  
IOH = -4.0mA  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.  
Contact factory for low power option.  
DATA RETENTION CHARACTERISTICS (WEDPS512K32LV-XBX only)  
-55°C TA +125°C  
Parameter  
Symbol  
VCC  
Conditions  
Min  
Max  
Units  
V
Data Retention Voltage  
Data Retention Current  
VCC = 2.19V  
CS = VCC - 0.2V  
2.19  
ICCDR  
8.0  
mA  
Microsemi Corporation reserves the right to change products or specications without notice.  
May 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 6  
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com