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WE128K32N-300G2TI 参数 Datasheet PDF下载

WE128K32N-300G2TI图片预览
型号: WE128K32N-300G2TI
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module,]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件页数/大小: 16 页 / 1197 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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WE128K32-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Voltage on OE# and A9  
Symbol  
TA  
TSTG  
VG  
Unit  
°C  
°C  
V
CS#  
H
OE#  
X
WE#  
X
Mode  
Standby  
Read  
Data I/O  
High Z  
-55 to +125  
-65 to +150  
-0.6 to + 6.25  
-0.6 to +13.5  
L
L
H
Data Out  
L
H
L
Write  
Data In  
V
X
H
X
Out Disable  
Write  
High Z/Data Out  
NOTE:  
X
X
H
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this specication is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
X
L
X
Inhibit  
CAPACITANCE  
TA = +25°C  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
COE  
Conditions  
Max Unit  
OE# capacitance  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
50  
pF  
pF  
Parameter  
Supply Voltage  
Symbol  
VCC  
VIH  
Min  
4.5  
2.0  
-0.5  
-55  
-40  
Max  
5.5  
Unit  
V
V
V
°C  
°C  
WE1-4# capacitance  
HIP (PGA)  
CWE  
20  
20  
20  
20  
50  
Input High Voltage  
Input Low Voltage  
VCC + 0.3  
+0.8  
CQFP G2T  
VIL  
Operating Temp. (Mil.)  
Operating Temp. (Ind.)  
TA  
TA  
+125  
+85  
CS1-4# capacitance  
Data I/O capacitance  
Address input capacitance  
CCS  
CI/O  
CAD  
VIN = 0 V, f = 1.0 MHz  
VI/O = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
pF  
pF  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C TA +125°C  
Conditions  
Parameter  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current (x32)  
Standby Current  
Symbol  
Min  
Max  
10  
10  
250  
2.5  
0.45  
Unit  
ILI  
VCC = 5.5, VIN = GND to VCC  
μA  
μA  
mA  
mA  
V
ILOx32  
ICCx32  
ISB  
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz  
CS# = VIH, OE# = VIH, f = 5MHz  
IOL = 2.1mA, VCC = 4.5V  
Output Low Voltage  
VOL  
Output High Voltage  
VOH  
IOH = -400μA, VCC = 4.5V  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
FIGURE 3 AC TEST CIRCUIT  
AC TEST CONDITIONS  
Parameter  
Typ  
Unit  
V
Input Pulse Levels  
VIL = 0, VIH = 3.0  
Input Rise and Fall  
5
ns  
V
I
OL  
Input and Output Reference Level  
Output Timing Reference Level  
Notes: VZ is programmable from -2V to +7V.  
1.5  
1.5  
Current Source  
V
I
OL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75Ω.  
Z is typically the midpoint of VOH and VOL  
OL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
V
~ 1.5V  
~
z
D.U.T  
= 50 pf  
Bipolar Supply  
C
eff  
V
I
.
I
OH  
Current Source  
3
4315.19E-0718-ss-WE128K32-XXX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com