WE128K32-XXX
PAGE WRITE CHARACTERISTICS
PAGE WRITE OPERATION
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
The WE128K32-XXX has a page write operation that allows one
to 128 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150μs or less,
a new time out period begins. Each write cycle restarts the delay
period. The write cycles can be continued as long as the interval
is less than the time out period.
Page Mode Write Characteristics
Parameter
Symbol
Min
Max
Unit
Write Cycle Time, TYP = 6ms
Address Set-up Time
Address Hold Time (1)
Data Set-up Time
tWC
tAS
10
ms
ns
ns
ns
ns
ns
μs
ns
0
tAH
100
50
tDS
Data Hold Time
tDH
10
Write Pulse Width
tWP
tBLC
tWPH
100
Byte Load Cycle Time
Write Pulse Width High
150
The usual procedure is to increment the least significant address
lines fromA0 throughA6 at each write cycle. In this manner a page
of up to 128 bytes can be loaded in to the EEPROM in a burst mode
before beginning the relatively long interval programming cycle.
50
1. Page address must remain valid for duration of write cycle.
After the 150μs time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes will
be written at the same time. The internal programming cycle is the
same regardless of the number of bytes accessed.
FIGURE 9 – PAGE MODE WRITE WAVEFORMS
OE#
CS#
WE#
ADDRESS
DATA
8
4315.19E-0718-ss-WE128K32-XXX
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
