W3H128M72E-XSBX / W3H128M72E-XNBX
DESCRIPTION
GENERAL NOTES
The 8Gb DDR2 SDRAM is a high-speed CMOS, dynamic random-
access memory containing five 2Gb 2,147,483,648 bits chips. Each
of the five chips in the MCP are internally configured as 8-bank
DRAM. The block diagram of the device is shown in Figure 2. Ball
assignments are shown in Figure 3.
The functionality and the timing specifications discussed in this
data sheet are for the DLL-enabled mode of operation.
Throughout the data sheet, the various figures and text refer to
DQs as “DQ.” The DQ term is to be interpreted as any and all
DQ collectively, unless specifically stated otherwise. Additionally,
each chip is divided into 2 bytes, the lower byte and upper byte.
For the lower byte (DQ0–DQ7), DM refers to LDM and DQS
refers to LDQS. For the upper byte (DQ8–DQ15), DM refers to
UDM and DQS refers to UDQS. Note that the there is no upper
byte for U4 and therefore no UDM4.
The 8Gb DDR2 SDRAM uses a double-data-rate architecture to
achieve high-speed operation. The double data rate architecture is
essentially a 4n-prefetch architecture, with an interface designed
to transfer two data words per clock cycle at the I/O balls. A single
read or write access for the 8Gb DDR2 SDRAM effectively consists
of a single 4n-bit-wide, one-clock-cycle data transfer at the internal
DRAM core and four corresponding n-bit-wide, one-half-clock-cycle
data transfers at the I/O balls.
Complete functionality is described throughout the document
and any page or diagram may have been simplified to convey a
topic and may not be inclusive of all requirements.
A bidirectional data strobe (DQS, DQS#) is transmitted externally,
along with data, for use in data capture at the receiver. DQS is a
strobe transmitted by the DDR2 SDRAM during READs and by the
memory controller during WRITEs. DQS is edge-aligned with data
for READs and center-aligned with data for WRITEs. Two strobes
per chip, one for the lower byte (LDQS, LDQS#) and one for the
upper byte (UDQS, UDQS#).
Any specific requirement takes precedence over a general
statement.
INITIALIZATION
DDR2 SDRAMs must be powered up and initialized in a
predefined manner. Operational procedures other than those
specified may result in undefined operation. The following
sequence is required for power up and initialization and is
shown in Figure 4 on page 6.
The 8Gb DDR2 SDRAM operates from a differential clock (CK and
CK#); the crossing of CK going HIGH and CK# going LOW will
be referred to as the positive edge of CK. Commands (address
and control signals) are registered at every positive edge of CK.
Input data is registered on both edges of DQS, and output data is
referenced to both edges of DQS, as well as to both edges of CK.
Read and write accesses to the DDR2 SDRAM are burst oriented;
accesses start at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses begin
with the registration of anACTIVE command, which is then followed
by a READ or WRITE command. The address bits registered
coincident with the ACTIVE command are used to select the bank
and row to be accessed. The address bits registered coincident
with the READ or WRITE command are used to select the bank
and the starting column location for the burst access.
The DDR2 SDRAM provides for programmable read or write
burst lengths of four or eight locations. DDR2 SDRAM supports
interrupting a burst read of eight with another read, or a burst
write of eight with another write. An auto precharge function may
be enabled to provide a self-timed row precharge that is initiated
at the end of the burst access.
As with standard DDR SDRAMs, the pipelined, multibank
architecture of DDR2 SDRAMs allows for concurrent operation,
thereby providing high, effective bandwidth by hiding row precharge
and activation time.
Aself refresh mode is provided, along with a power-saving power-
down mode.
All inputs are compatible with the JEDEC standard for SSTL_18.
All full drive-strength outputs are SSTL_18-compatible.
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4163.12E-0716-ss-W3H128M72E-XSBX / XNBX
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
