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W3E32M64S-200SBM 参数 Datasheet PDF下载

W3E32M64S-200SBM图片预览
型号: W3E32M64S-200SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 18 页 / 648 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XSBX  
White Electronic Designs  
FIGURE 3 MODE REGISTER DEFINITION  
TABLE 1 – BURST DEFINITION  
Order of Accesses Within a Burst  
Burst  
Length  
Starting Column  
Address  
A10  
A9  
A8  
A7  
A
6
A5  
A4  
A3  
A
2
A
1
A0  
BA1  
BA0  
A12  
A11  
Address Bus  
Type = Sequential Type = Interleaved  
A0  
0
Mode Register (Mx)  
2
4
0-1  
1-0  
0-1  
1-0  
0*  
0*  
Operating Mode  
CAS Latency BT  
Burst Length  
1
*
M14 and M13  
(BA0 and BA1 must be  
"0, 0" to select  
the base mode register  
(vs. the extended  
mode register).  
A1  
0
A0  
0
Burst Length  
M2 M1 M0  
M3 = 0  
M3 = 1  
Reserved  
2
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
2
0
1
4
4
1
0
8
8
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
1
1
A2  
0
A1  
0
A0  
0
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
0
0
1
Burst Type  
M3  
0
1
0
0
1
Sequential  
Interleaved  
8
0
1
1
CAS Latency  
M6 M5 M4  
1
0
0
Reserved  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
0
1
1
1
0
3
Reserved  
Reserved  
2.5  
1
1
1
NOTES:  
Reserved  
1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the  
starting column within the block.  
M11  
0
M10  
0
M9  
0
M8  
0
M7  
0
M6-M0  
Valid  
Operating Mode  
M12  
0
2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the  
starting column within the block.  
3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the  
starting column within the block.  
Normal Operation  
0
0
0
1
0
0
Valid  
Normal Operation/Reset DLL  
-
-
-
All other states reserved  
-
-
-
-
4. Whenever a boundary of the block is reached within a given sequence above, the  
following access wraps within the block.  
HIGH, the corresponding data inputs will be ignored, and a  
WRITE will not be executed to that byte/column location.  
one bank is to be precharged, inputs BA0, BA1 select the  
bank. Otherwise BA0, BA1 are treated as “Don’t Care.”  
Once a bank has been precharged, it is in the idle state and  
must be activated prior to any READ or WRITE commands  
being issued to that bank. A PRECHARGE command will  
be treated as a NOP if there is no open row in that bank  
(idle state), or if the previously open row is already in the  
process of precharging.  
PRECHARGE  
The PRECHARGE command is used to deactivate the  
open row in a particular bank or the open row in all banks.  
The bank(s) will be available for a subsequent row access  
a specified time (tRP) after the PRECHARGE command is  
issued. Except in the case of concurrent auto precharge,  
where a READ or WRITE command to a different bank is  
allowed as long as it does not interrupt the data transfer  
in the current bank and does not violate any other timing  
parameters. Input A10 determines whether one or all  
banks are to be precharged, and in the case where only  
AUTO PRECHARGE  
AUTO PRECHARGE is a feature which performs the  
same individual-bank PRECHARGE function described  
above, but without requiring an explicit command. This is  
accomplished by usingA10 to enableAUTO PRECHARGE  
January 2008  
Rev. 6  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com