MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES SMCJ SERIES
Fig. 1 - Peak Pulse Power Rating
Fig.2 - Pulse Derating Curve
100
10
1
100
87.5
75
62.5
50
37.5
25
0.31x0.31"(8.0x8.0mm)
Copper Pad Areas
12.5
0.1
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0.2
0.4
0.6
0.8
1
1.2
t - Pulse Width (sec.)
d
T
- Ambient Temperature (°C)
A
100000
Fig.4 - Typical Junction Capacitance
Uni-Directional
Fig.3 - Pulse Waveform
20000
10000
150
Measured at
Zero Bias
T
= 25°C
J
t = 10µsec.
r
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of IPPM
Peak Value
IPPM
100
1000
100
Half Value- IPPM
2
VR,Measured at
Stand-Off
Voltage, VWM
10/1000µsec.Waveform
as defined by R.E.A.
50
TJ = 25°C
Uni-Directional
Bi-Directional
f = 1.0MHZ
400
400
Vsig = 50mVp-p
1000
10
t
d
0
1.0
10
100
4.0
3.0
4.0
2.03.0
t - Time(ms)
0
1.0
V
- Reverse Stand-Off Voltage (V)
WM
1000
Fig. 5 - Typ.Transient Thermal Impedance
100
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
10
100
1
1.0
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
= T max,
J
J
0.1
10
0.001
0.01
0.1
1
10
100
1000
1
10
100
Number of Cycles at 60 Hz
tp-Pulse Duration (sec)
MDE [ MDE SEMICONDUCTOR, INC. ]
