MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P6KE SERIES
Fig.2 - Pulse Derating Curve
100
Pig.1 - Peak Pulse Power Rating Curve
87.5
75
Non-repetitive Pulse
Waveform shown in Fig.
3
100
10
1
62.5
50
37.5
25
0.1
12.5
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0.2
0.4
0.6
0.8
1
1.2
t - Pulse Width (sec.)
d
TA - Ambient Temperature
Fig.3 - Pulse Waveform
150
100
10000Fig.4 - Typ.Junction Capacitance Uni-
t = 10µsec.
r
T
= 25°C
6000
J
Measured at
TJ = 25°C
Pulse Width(td)is
defined
Peak Value
IPPM
Zero Bias
f = 1.0MHZ
as the point where the
peak current decays to
50% of IPPM
Vsig = 50mVp-p
1000
Half Value- IPPM
10/1000µsec.Waveform
as defined by R.E.A.
50
0
100
Measured at
Stand-Off
Voltage, VWM
t
4.0
0
1.0
4.0
2.0
3.0
1000
10
t - Time(ms)
1.0
1
100
200
V
- Reverse Stand-Off Voltage (V)
WM
Fig.6 - Max.Non-Repetitive Forward Surge
Fig.5 - steady State Power Derating Curve
5.00
4.38
3.75
3.13
2.50
1.88
1.25
0.63
200
100
TJ = TJ max.
Uni-Directional Only
L=0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
8.3ms Single Half Sine-
Wave
50
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
0.00
0
10
0
25
50
75
100
125
150
175
200
1
10
100
5
50
TL - Lead Temperature (°C
Number of Cycles at 60
Fig.7 - Typical Reverse Leakage Characteristics
Fig. 8 - Typ.Transient Thermal Impedance
1000
100
10
100
Measured at Devices
Stand-off Voltage,VWM
10
TA = 25°C
1
0.1
1
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
tp-Pulse Duration (sec)
V(BR) - Breakdown Voltage (V)
MDE [ MDE SEMICONDUCTOR, INC. ]
