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MX29LV800BXBC-90 参数 Datasheet PDF下载

MX29LV800BXBC-90图片预览
型号: MX29LV800BXBC-90
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ 1Mx8 / 512K X16 ] CMOS单电压3V仅限于Flash存储器 [8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 60 页 / 1244 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV800T/B  
ERASE AND PROGRAMMING PERFORMANCE(1)  
LIMITS  
PARAMETER  
MIN.  
TYP.(2)  
MAX.(3)  
UNITS  
Sector Erase Time  
0.7  
14  
9
15  
sec  
sec  
Chip Erase Time  
Byte Programming Time  
Word Programming Time  
Chip Programming Time  
300  
360  
27  
us  
11  
9
us  
Byte Mode  
Word Mode  
sec  
5.8  
17  
sec  
Erase/Program Cycles  
100,000  
Cycles  
Note: 1.Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25°C, 3V.  
3.Maximum values measured at 25°C, 2.7V.  
LATCHUP CHARACTERISTICS  
MIN.  
-1.0V  
MAX.  
Input Voltage with respect to GND on all pins except I/O pins  
Input Voltage with respect to GND on all I/O pins  
Current  
12.5V  
Vcc + 1.0V  
+100mA  
-1.0V  
-100mA  
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.  
P/N:PM0709  
REV. 1.3, JAN. 24, 2002  
52  
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