MX29LV800C T/B
ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
0.7
14
9
15
sec
sec
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
300
360
27
us
11
9
us
Byte Mode
Word Mode
sec
5.8
17
sec
Erase/Program Cycles
100,000
Cycles
Note: 1. Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3. Maximum values measured at 25°C, 2.7V.
LATCH-UP CHARACTERISTICS
MIN.
-1.0V
MAX.
Input Voltage with respect to GND on OE#, RESET#, A9
Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#
Input Voltage with respect to GND on all I/O pins
12.5V
-1.0V
VCC + 1.0V
VCC + 1.0V
+100mA
-1.0V
Current
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N:PM1183
REV. 1.4, APR. 24, 2006
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