MX29LV800C T/B
AC CHARACTERISTICS TA = -40oC to 85oC,VCC = 2.7V~3.6V (RestrictedVCC=3.0V~3.6V for 45R/55R)
TABLE 11. Erase/Program Operations
Parameter
Std.
Speed Options
45R 55R 70
Description
90
90
0
Unit
ns
tWC
Write Cycle Time (Note 1)
Address Setup Time
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
45
0
55
0
70
0
tAS
ns
tAH
Address Hold Time
45
35
0
45
35
0
45
35
0
45
45
0
ns
tDS
Data Setup Time
ns
tDH
Data Hold Time
ns
tOES
tGHWL
Output Enable Setup Time
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
0
0
0
0
ns
0
0
0
0
ns
tCS
MIN.
MIN.
MIN.
MIN.
TYP.
TYP.
TYP.
MIN.
MIN.
MAX.
MIN.
TYP.
MIN.
TYP.
MAX.
0
0
0
0
0
0
0
0
ns
ns
ns
ns
us
us
sec
us
ns
ns
ns
us
ns
ms
us
tCH
CE# Hold Time
tWP
Write Pulse Width
35
30
9
35
30
9
35
30
9
35
30
9
tWPH
tWHWH1
Write Pulse Width High
ProgrammingOperation(Note2)
(Byte/Wordprogramtime)
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
Write Pulse Width for Sector Protect
(A9, OE# Control)
BYTE
WORD
11
0.7
50
0
11
11
11
tWHWH2
tVCS
0.7 0.7 0.7
50
0
50
0
50
0
tRB
tBUSY
tWPP1
90
100
10
100
12
50
90
90
90
100 100 100
10 10 10
100 100 100
tWPP2
Write Pulse Width for Chip Unprotected
(A9, OE# Control)
12
50
12
50
12
50
tBAL
Sector Address Load Time
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM1183
REV. 1.4, APR. 24, 2006
27
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