MX29LV640BT/BB
AC CHARACTERISTICS
Erase and Program Operations
Parameter
TA=-40°C to 85°C, VCC=2.7V~3.6V
Speed Options
Std.
tWC
tCWC
tAS
Description
90
90
90
120
120
120
Unit
ns
Write CycleTime (Note 1)
CommandWrite CycleTime (Note 1)
Address SetupTime
Min
Min
Min
Min
Min
Min
ns
0
ns
tASO
tAH
Address SetupTime to OE# low during toggle bit polling
Address HoldTime
15
ns
45
45
50
50
ns
tAHT
Address HoldTime From CE# or OE# high during toggle
bit polling
0
ns
tDS
Data SetupTime
Min
Min
Min
Min
ns
ns
ns
ns
tDH
Data HoldTime
0
20
0
tOEPH
tGHWL
Output Enable High during toggle bit polling
Read RecoveryTime Before Write
(OE# High to WE# Low)
tGHEL
tCS
Read RecoveryTime Before Write
CE# SetupTime
Min
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
Min
Min
0
0
0
ns
ns
ns
ns
ns
us
us
sec
ns
us
ns
ns
tCH
CE# HoldTime
tWP
Write Pulse Width
35
50
tWPH
tWHWH1
Write PulseWidth High
30
9
Programming Operation
Byte
Word
11
1.6
250
50
0
tWHWH2
tVHH
Sector Erase Operation (Note 2)
VHH Rise and FallTime (Note 1)
VCC SetupTime (Note 1)
tVCS
tRB
Write RecoveryTime from RY/BY#
Program/EraseValid to RY/BY# Delay
tBUSY
90
Notes:
1. Not 100% tested.
2. See the "Erase And Programming Performance" section for more information.
P/N:PM1076
REV. 1.2, SEP. 07, 2005
44