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MX29LV320ATTC-90G 参数 Datasheet PDF下载

MX29LV320ATTC-90G图片预览
型号: MX29LV320ATTC-90G
PDF下载: 下载PDF文件 查看货源
内容描述: 32M - BIT [ 4M ×8 / 2M ×16 ]单电压3V仅限于Flash存储器 [32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 60 页 / 604 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV320AT/B  
ERASE AND PROGRAMMING PERFORMANCE(1)  
LIMITS  
PARAMETER  
MIN.  
TYP.(2)  
MAX.  
15  
UNITS  
sec  
sec  
us  
Sector Erase Time  
Chip Erase Time  
0.9  
35  
9
50  
Byte Programming Time  
Word Program Time  
Chip Programming Time  
300  
360  
108  
72  
11  
36  
24  
7
us  
Byte Mode  
Word Mode  
sec  
sec  
us  
Accelerated Byte/Word Program Time  
Erase/Program Cycles  
210  
100,000  
Cycles  
Note: 1.Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25°C,3.3V.  
LATCH-UP CHARACTERISTICS  
MIN.  
-1.0V  
MAX.  
Input Voltage with respect to GND on all pins except I/O pins  
Input Voltage with respect to GND on all I/O pins  
VCC Current  
12.5V  
Vcc + 1.0V  
+100mA  
-1.0V  
-100mA  
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.  
TSOP PIN CAPACITANCE  
Parameter Symbol  
Parameter Description  
Input Capacitance  
Test Set  
VIN=0  
TYP  
MAX  
7.5  
12  
UNIT  
pF  
CIN  
6
COUT  
CIN2  
Output Capacitance  
Control Pin Capacitance  
VOUT=0  
VIN=0  
8.5  
7.5  
pF  
9
pF  
Notes:  
1. Sampled, not 100% tested.  
2.Test conditions TA=25°C, f=1.0MHz  
P/N:PM1008  
REV. 1.1, MAY 28, 2004  
53  
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