MX29LV64xM H/L
64M-BIT SINGLE VOLTAGE 3V ONLY
UNIFORM SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• Low Power Consumption
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
- Active read current: 18mA(typ.)
- Active write current: 20mA(typ.)
- Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-years data retention
• Configuration
- 8,388,608 x 8 / 4,194,304 x 16 switchable (for
MX29LV640M H/L)
- 4,194,304 x 16 (for MX29LV641M H/L)
• Sector structure
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Program Suspend/Program Resume
- Suspend program operation to read other sectors
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data/pro-
gram other sectors
- 64KB(32KW) x 128
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
- Provides a 128-word/256-byte area for code or data
that can be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output (for MX29LV640M H/L
only)
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
PERFORMANCE
• High Performance
- Write protect (WP#) function allows protection high-
est or lowest sector, regardless of sector protection
settings
- ACC (high voltage) accelerates programming time
for higher throughput during system
- Fast access time: 90ns
- Page read time:25ns
- Sector erase time: 0.5s (typ.)
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer:reduces programming
time for multiple-word/byte updates
PACKAGE
• 48-pin TSOP (for MX29LV641M H/L)
• 56-pin TSOP (for MX29LV640M H/L)
GENERAL DESCRIPTION
The MX29LV64xM H/L is a 64-mega bit Flash memory
organized as 8M bytes of 8 bits or 4M words of 16 bits
(for MX29LV640M H/L), or 4M words of 16bits (for
MX29LV641M H/L). MXIC's Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX29LV64xM H/L is pack-
aged in 48-pinTSOP and 56-pinTSOP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV64xM H/L offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV64xM H/L has separate chip enable
P/N:PM1093
REV. 1.1, AUG. 11, 2005
1
Macronix [ MACRONIX INTERNATIONAL ]
