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MX29F200BMC-90 参数 Datasheet PDF下载

MX29F200BMC-90图片预览
型号: MX29F200BMC-90
PDF下载: 下载PDF文件 查看货源
内容描述: 2M- BIT [ 256Kx8 / 128Kx16 ] CMOS FLASH MEMORY [2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 46 页 / 720 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29F200T/B  
WRITE OPERATION STATUS DATA  
ERASE RESUME  
POLLING-Q7  
This command will cause the command register to clear  
thesuspendstateandreturnbacktoSectorErasemode  
but only if an Erase Suspend command was previously  
issued. Erase Resume will not have any effect in all  
otherconditions.AnotherEraseSuspendcommandcan  
be written after the chip has resumed erasing.  
The MX29F200T/B also features Data Polling as a  
methodtoindicatetothehostsystemthattheAutomatic  
Program or Erase algorithms are either in progress or  
completed.  
While the Automatic Programming algorithm is in  
operation, anattempttoreadthedevicewillproducethe  
complement data of the data last written to Q7. Upon  
completion of the Automatic Program Algorithm an  
attempt to read the device will produce the true data last  
written to Q7. The Data Polling feature is valid after the  
risingedgeofthefourth WEpulseofthefourwritepulse  
sequences for automatic program.  
SET-UP AUTOMATIC PROGRAM  
COMMANDS  
To initiate Automatic Program mode, A three-cycle  
commandsequenceisrequired. Therearetwo"unlock"  
writecycles. ThesearefollowedbywritingtheAutomatic  
Program command A0H.  
While the Automatic Erase algorithm is in operation, Q7  
willread"0"untiltheeraseoperationiscompeted. Upon  
completion of the erase operation, the data on Q7 will  
read"1". TheDataPollingfeatureisvalidaftertherising  
edge of the sixth WE pulse of six write pulse sequences  
for automatic chip/sector erase.  
Once the Automatic Program command is initiated, the  
next WE pulse causes a transition to an active  
programming operation. Addresses are latched on the  
fallingedge,and dataareinternally latchedon therising  
edgeoftheWEpulse. TherisingedgeofWEalsobegins  
the programming operation. The system does not  
require toprovidefurthercontrolsortimings. Thedevice  
will automatically provide an adequate internally  
generated program pulse and verify margin.  
The Data Polling feature is active during Automatic  
Program/Erase algorithm or sector erase time-out.(see  
section Q3 Sector Erase Timer)  
If the program opetation was unsuccessful, the data on  
Q5 is "1"(see Table 4), indicating the program operation  
exceedinternaltiminglimit.Theautomaticprogramming  
operation is completed when the data read on Q6 stops  
togglingfortwoconsecutivereadcyclesandthedataon  
Q7 and Q6 are equivalent to data written to these two  
bits, at which time the device returns to the Read  
mode(no program verify command is required).  
RY/BY:Ready/Busy  
The RY/BY is a dedicated, open-drain output pin that  
indicateswhetheranAutomaticErase/Programalgorithm  
is in progress or complete. The RY/BY status is valid  
aftertherisingedgeofthefinalWEpulseinthecommand  
sequence. SinceRY/BYisanopen-drainoutput,several  
RY/BYpinscanbetiedtogetherinparallelwithapull-up  
resistor to Vcc.  
Iftheoutputsislow(Busy), thedeviceisactivelyerasing  
or programming. (This includes programming in the  
EraseSuspendmode.) Iftheoutputishigh(Ready), the  
device is ready to read array data (including during the  
Erase Suspend mode), or is in the standby mode.  
P/N:PM0549  
REV. 1.3 , DEC. 24, 2001  
11  
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