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MX29F200BMC-70 参数 Datasheet PDF下载

MX29F200BMC-70图片预览
型号: MX29F200BMC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 2M- BIT [ 256Kx8 / 128Kx16 ] CMOS FLASH MEMORY [2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 46 页 / 720 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29F200T/B  
ERASE AND PROGRAMMING PERFORMANCE(1)  
LIMITS  
PARAMETER  
MIN.  
TYP.(2)  
MAX.(3)  
UNITS  
Sector Erase Time  
1
3
8
s
s
Chip Erase Time  
24  
Byte Programming Time  
Word Programming Time  
Chip Programming Time  
Erase/Program Cycles  
7
210  
360  
10.5  
us  
12  
3.5  
us  
sec  
Cycles  
100,000  
Note: 1.Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25°C,5V.  
3.Maximum values measured at 25°C,4.5V.  
LATCHUP CHARACTERISTICS  
MIN.  
-1.0V  
MAX.  
Input Voltage with respect to GND on all pins except I/O pins  
Input Voltage with respect to GND on all I/O pins  
Current  
13.5V  
Vcc + 1.0V  
+100mA  
-1.0V  
-100mA  
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.  
DATA RETENTION  
PARAMETER  
MIN.  
UNIT  
DataRetentionTime  
20  
Years  
P/N:PM0549  
REV. 1.3 , DEC. 24, 2001  
41  
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