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MX25U4035ZUI-25G 参数 Datasheet PDF下载

MX25U4035ZUI-25G图片预览
型号: MX25U4035ZUI-25G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ ×1 / ×2 / ×4 ] 1.8V的CMOS串行闪存 [4M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH]
分类和应用: 闪存
文件页数/大小: 54 页 / 2237 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25U4035  
MX25U8035  
Symbol Alt. Parameter  
Min.  
Typ.  
Max.  
200  
300  
7
220  
1.6  
3
Unit  
ns  
us  
ms  
ms  
s
s
s
s
tW  
tBP  
Write Status Register Cycle Time  
Byte-Program  
30  
2
tPP  
tSE  
tBE32  
tBE  
Page Program Cycle Time  
Sector Erase Cycle Time  
Block Erase (32KB) Cycle Time  
Block Erase (64KB) Cycle Time  
90  
0.8  
1.5  
7.5  
15  
4Mb  
8Mb  
13  
25  
tCE  
Chip Erase Cycle Time  
Notes:  
1. tCH + tCL must be greater than or equal to 1/ Frequency.  
2. Value guaranteed by characterization, not 100% tested in production.  
3. tSHSL=30ns for read instruction, tSHSL=50ns for Write/Erase/Program instruction.  
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.  
5. Test condition is shown as Figure 4, 5.  
P/N: PM1394  
REV. 1.0, MAR. 09, 2009  
33  
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