MX25L4006E
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Typ. (1)
5
Max. (2)
Unit
ms
ms
s
Write Status Register Cycle Time
Sector erase Time
40
300
2
60
Block erase Time
0.7
3.5
9
Chip Erase Time
7.5
300
5
s
Byte Program Time (via page program command)
Page Program Time
us
ms
cycles
1.4
Erase/Program Cycle
100,000
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
DATA RETENTION
Parameter
Condition
Min.
Max.
Unit
Data retention
55˚C
20
years
LATCH-UP CHARACTERISTICS
Min.
-1.0V
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
2 VCCmax
VCC + 1.0V
+100mA
-1.0V
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1576
REV. 1.3, FEB. 10, 2012
43
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