MCC
Features
•
•
omponents
21201 Itasca Street Chatsworth
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MMBTA42
Surface Mount SOT-23 Package
Capable of 300mWatts of Power Dissipation
C
Pin Configuration
Top View
NPN Silicon High
Voltage Transistor
SOT-23
A
D
1D
B
E
Min
300
300
6.0
0.1
0.1
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
G
H
J
F
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=200Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=30mAdc, V
CE
=10Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
25
40
40
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
K
DIMENSIONS
----
0.5
Vdc
V
BE(sat)
0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cb
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=20Vdc, f=100MHz)
Collector-Emitter Capacitance
(V
CB
=20Vdec, I
E
=0, f=1.0MHz)
50
3.0
MHz
pF
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
*Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Symbol
P
D
Max
225
1.8
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
qJA
P
D
556
300
2.4
.037
.950
.037
.950
R
qJA
T
J
, T
stg
417
–55 to +150
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