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MMBT2222A 参数 Datasheet PDF下载

MMBT2222A图片预览
型号: MMBT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用放大器 [NPN General Purpose Amplifier]
分类和应用: 晶体放大器晶体管开关光电二极管IOT
文件页数/大小: 4 页 / 114 K
品牌: MCC [ Micro Commercial Components ]
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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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MMBT2222A
Features
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation, I
C
=600mA
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Marking:1P
NPN General
Purpose Amplifier
SOT-23
A
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cutoff Current
(V
CE
=60Vdc, V
BE
=3.0Vdc)
Min
40
75
6.0
10
Max
Units
Vdc
Vdc
Vdc
F
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
C
B
C
B
E
nAdc
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=10Vdc)
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
35
50
75
100
50
40
G
H
J
K
DIMENSIONS
300
DIM
A
B
C
D
E
F
G
H
J
K
V
CE(sat)
0.3
1.0
0.6
1.2
2.0
Vdc
V
BE(sat)
Vdc
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=10Vdec, I
E
=0, f=1.0MHz)
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
Noise Figure
(I
C
=100µAdc, V
CE
=10Vdc, R
S
=1.0kΩ
f=1.0kHz)
Delay Time
(V
CC
=30Vdc, V
BE
=0.5Vdc
Rise Time
I
C
=150mAdc, I
B1
=15mAdc)
Storage Time
(V
CC
=30Vdc, I
C
=150mAdc
Fall Time
I
B1
=I
B2
=15mAdc)
300µs, Duty Cycle
2.0%
300
8.0
25
4.0
MHz
pF
pF
dB
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
10
25
225
60
ns
ns
ns
ns
.037
.950
.037
.950
www.mccsemi.com
Revision: 8
1 of 4
2010/02/10