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BC847CW 参数 Datasheet PDF下载

BC847CW图片预览
型号: BC847CW
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用晶体管 [NPN General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 585 K
品牌: MCC [ Micro Commercial Components ]
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MCC
Micro Commercial Components
TM
ON CHARACTERISTICS
Symbol
I
CBO
Parameter
Collector-base Cut-off Current
(I
CE
=0, V
CB
=30Vdc)
(I
CE
=0, V
CB
=30Vdc, T
j
=150 )
Emitter-base Cut-off Current
(I
C
=0, V
EB
=5Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=0.5mAdc)
(I
C
=100mAdc, I
B
=5mAdc*)
Base-Emitter Saturation Voltage
(I
C
=10mAdc,I
B
=0.5mAdc)
(I
C
=100mAdc, I
B
=5mAdc*)
DC Current Gain (I
C
=10µA; V
CE
=5V)
BC846AW; BC847AW;BC848AW
BC846BW; BC847BW;BC848BW
BC847CW;BC848CW
DC Current Gain (I
C
=2mA; V
CE
=5V)
BC846AW; BC847AW;BC848AW
BC846BW; BC847BW;BC848BW
BC847CW;BC848CW
V
BE
Base-emitter Voltage
(I
C
=2mAdc,V
CE
=5V)
(I
C
=10mAdc,V
CE
=5V)
Collector Capacitance (V
CB
=10V; I
E
=I
e
=0; f=1MHz)
Transition Frequency (V
CE
=5V; I
C
=10mA; f=100MHz)
Noise Figure (V
CE
=5V; I
C
=200µA; f=1KHz; B=200Hz; R
S
=2K¡)
Min
---
---
---
---
---
---
---
---
---
---
Typ
---
---
---
90
200
700
900
90
150
270
Max
15
5
100
250
600
---
---
---
---
---
Units
nA
µA
nA
mVdc
mVdc
mVdc
mVdc
I
CEO
V
CE(sat)
V
BE(sat)
h
FE
110
200
420
580
---
---
100
---
180
290
520
660
---
---
---
---
220
450
800
700
770
4.5
---
10
mVdc
mVdc
pF
MHz
dB
Cc
f
T
F
* Pulse test: t
P
300µs;
¥
0.02
Revision: 6
www.mccsemi.com
2 of
5
2008/01/01