Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
TEST CONDITION
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Output Voltage
Data Lines: V Min, IOL = 2.1mA
V
1, 2, 3
--
0.4
0.4
--
V
V
V
V
V
CC
OL
RDY/BSY_Line: VCC Min, IOL = 12mA
Data Lines: VCC Min, IOH = -400µA
RDY/BSY_Line: VCC Min, IOH = -12mA
V
OL
V
2.4
2.4
OH
V
--
OH
All Outputs: V Min, IOH=-100uA
V -0.3V
CC
CC
1. All Inputs are tied to Vcc with a 5.5KW resistor, except for RES which is 30KW.
2. For RES ILI=800uA max.
3. Only one CE active (low) at a time
1
TABLE 7. 79LV0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-200
-250
--
--
200
250
Chip Enable Access Time OE = V , WE = V
-200
-250
tCE
tOE
tOH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
IL
IH
--
--
200
250
Output Enable Access TIme CE = V , WE = V
IL
IH
-200
-250
0
0
110
120
Output Hold to Address Change CE = OE =V , WE = V
-200
-250
IL
IH
0
0
--
--
Output Disable to High-Z 2
CE = V , WE = V
tDF
ns
ns
IL
IH
-200
-250
0
0
50
50
CE = OE = V , WE = V
tDFR
IL
IH
-200
-250
0
0
300
350
3
RES to Output Delay CE = OE = V , WE = V
TRR
9, 10, 11
ns
IL
IH
-200
-250
0
0
525
550
1. Test conditions: input pulse levels = 0.4V to 2.2V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
All data sheets are subject to change without notice
01.10.05 Rev 8
5
©2005 Maxwell Technologies
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