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79LV0832RPQI-20 参数 Datasheet PDF下载

79LV0832RPQI-20图片预览
型号: 79LV0832RPQI-20
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 256K ×32位),低电压的EEPROM MCM [8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 459 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM  
79LV0832  
high for 100µs after data input, the EEPROM enters the write mode automatically and the data input is written into the  
EEPROM.  
WE, CE Pin Operation  
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of  
WE or CE.  
Data Polling  
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a  
write cycle, an inversion of the last dword of data to be loaded outputs from I/O 7, 15, 23, 31 to indicate that the  
EEPROM is performing a write operation.  
RDY/Busy Signal  
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal  
goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( V ).  
OH  
RES Signal  
When RES is LOW (V ), the EEPROM cannot be read or programmed. The EEPROM data must be protected by  
L
keeping RES low when V is power on and off. RES should be high (V ) during read and programming operations.  
CC  
H
Data Protection  
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.  
1. Data Protection at V on/off  
CC  
When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to  
CC  
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable  
state during VCC on/off by using a CPU reset signal to RES pin.  
All data sheets are subject to change without notice  
01.10.05 Rev 8  
13  
©2005 Maxwell Technologies  
All rights reserved