79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V = 5V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Data Latch Time
tDL
9, 10, 11
ns
-150
-200
300
400
--
--
Byte Load Window
-150
-200
tBL
tBLC
tDB
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
µs
µs
ns
ns
µs
µs
100
200
--
--
Byte Load Cycle
-150
-200
.55
.95
30
30
Time to Device Busy
-150
-200
120
170
--
--
Write Start Time 3
-150
-200
tDW
150
250
--
--
RES to Write Setup Time4
-150
-200
tRP
100
200
--
--
V
CC to RES Setup Time4
tRES
-150
-200
1
3
--
--
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1
TABLE 9. 79C0832 MODE SELECTION
CE 2
PARAMETER
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
V
IL
IL
IH
H
OH
Standby
Write
V
X
X
High-Z
X
V
IH
OH
V
V
V
D
V
VOH --> V
OL
IL
IH
IL
IN
H
Deselect
Write Inhibit
V
V
V
High-Z
V
V
OH
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
V
V
V
Data Out (I/O7)
High-Z
V
V
OL
IL
IL
IH
H
Program Reset
X
X
X
V
V
OH
L
1. Refer to the recommended DC operating conditions.
2. For CE0-1 only one CE can be used (“on”) at a time.
All data sheets are subject to change without notice
02.14.06 REV 15
7
©2006 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
