28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
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TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION
(VCC = 3.3V ± 10%, TA =-55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITIONS
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time
tACC
9, 10, 11
ns
-200
-250
CE =OE =V , WE =V
--
--
200
250
IL
IH
Chip Enable Access Time
-200
-250
tCE
tOE
tOH
tDF
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
OE =V , WE =V
--
--
200
250
IL
IH
Output Enable Access Time
-200
-250
CE =V , WE =V
0
0
110
120
IL
IH
Output Hold to Address Change
-200
-250
CE =OE =V , WE =V
0
0
--
--
IL
IH
Output Disable to High-Z2
-200
-250
CE =V , WE =V
0
0
50
50
IL
IH
Output Disable to High-Z
-200
-250
tDFR
CE =OE=V , WE =V
0
0
300
350
IL
IH
RES to Output Delay 3
tRR
-200
-250
CE =OE =V WE =V
0
0
525
600
IL
IH
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
03.14.03 REV 6
All data sheets are subject to change without notice
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©2001 Maxwell Technologies
All rights reserved.