28C256T
256K EEPROM (32K x 8-Bit)
EEPROM
DATA INPUTS/ OUTPUTS
I/ O0 - I/ O7
V
CC
GND
OE
WE
CE
DATA LATCH
OE, CE, a nd WE
LOGIC
INPUT/ OUTPUT
BUFFERS
Y DECODER
Y-GATING
CELL MATRIX
IDENTIFICATION
ADDRESS
INPUTS
X DECODER
Logic Diagram
FEATURES:
DESCRIPTION:
• RAD-PAK® radiation-hardened against natural space radia-
tion
• Total dose hardness:
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page pro-
grammability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and program-
ming operations.
- > 100 Krad (Si), dependent upon space mission
• Excellent Single Event Effects:
- SEL LET: > 120 MeV/mg/cm2
TH
- SEUTH LET (read mode): > 90 MeV/mg/cm2
- SEUTH LET (write mode): > 18 MeV/mg/cm2
• Package:
- 28 pin RAD-PAK® flat pack
- 28 pin RAD-PAK® DIP
- JEDEC approved byte wide pinout
• High Speed:
- 120, 150 ns maximum access times available
• High endurance:
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page Write Mode:
- 1 to 64 bytes
• Low power dissipation:
- 15 mA active current (cycle = 1 µs)
- 20 µA standby current (CE = V )
CC
1
02.18.02 Rev 5
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
