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28C256TRPDB-20 参数 Datasheet PDF下载

28C256TRPDB-20图片预览
型号: 28C256TRPDB-20
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件页数/大小: 14 页 / 262 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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28C256T  
256K EEPROM (32K x 8-Bit) EEPROM  
1
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION  
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)  
PARAMETER  
SYMBOL  
MIN  
MAX  
UNITS  
Address Access Time CE = OE = VIL, WE = VIH  
tACC  
ns  
-120  
-150  
-200  
--  
--  
--  
120  
150  
200  
CE to Output Delay OE = VIL, WE = VIH  
tCE  
tOE  
tOH  
tDF  
ns  
ns  
ns  
ns  
-120  
-150  
-200  
--  
--  
--  
120  
150  
200  
Output Enable Access Time CE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
75  
75  
90  
Output Hold from Address CE = OE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
--  
--  
--  
2
Output Disable to High-Z CE = VIL, WE = VIH  
-120  
-150  
-200  
0
0
0
50  
50  
60  
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including  
scope and jig); reference levels for measuring timing - 0.8V/1.8V.  
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.  
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS  
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)  
1
PARAMETER  
SYMBOL  
TYP  
MAX  
UNITS  
MIN  
Address Setup Time  
tAS  
ns  
0
0
0
--  
--  
--  
--  
--  
--  
-120  
-150  
-200  
2
CE to Write Setup Time  
tCS  
ns  
ns  
0
0
0
--  
--  
--  
--  
--  
--  
-120  
-150  
-200  
3
Chip Enable to Write Setup Time (WE Controlled)  
tWS  
-120  
-150  
-200  
0
0
0
--  
--  
--  
--  
All data sheets are subject to change without notice  
4
03.20.15 Rev 6  
©2015 Maxwell Technologies  
All rights reserved.