28C256T
256K EEPROM (32K x 8-Bit) EEPROM
1
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
MAX
UNITS
Address Access Time CE = OE = VIL, WE = VIH
tACC
ns
-120
-150
-200
--
--
--
120
150
200
CE to Output Delay OE = VIL, WE = VIH
tCE
tOE
tOH
tDF
ns
ns
ns
ns
-120
-150
-200
--
--
--
120
150
200
Output Enable Access Time CE = VIL, WE = VIH
-120
-150
-200
0
0
0
75
75
90
Output Hold from Address CE = OE = VIL, WE = VIH
-120
-150
-200
0
0
0
--
--
--
2
Output Disable to High-Z CE = VIL, WE = VIH
-120
-150
-200
0
0
0
50
50
60
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
1
PARAMETER
SYMBOL
TYP
MAX
UNITS
MIN
Address Setup Time
tAS
ns
0
0
0
--
--
--
--
--
--
-120
-150
-200
2
CE to Write Setup Time
tCS
ns
ns
0
0
0
--
--
--
--
--
--
-120
-150
-200
3
Chip Enable to Write Setup Time (WE Controlled)
tWS
-120
-150
-200
0
0
0
--
--
--
--
All data sheets are subject to change without notice
4
03.20.15 Rev 6
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