28C011T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Write Cycle Time2
tWC
9, 10, 11
ms
-120
-150
-200
--
--
--
10
10
10
Data Latch Time
tDL
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
µs
µs
ns
ns
µs
µs
-120
-150
-200
250
300
400
--
--
--
Byte Load Window
tBL
-120
-150
-200
100
100
200
--
--
--
Byte Load Cycle
tBLC
-120
-150
-200
0.55
0.55
0.95
30
30
30
Time to Device Busy
tDB
-120
-150
-200
100
120
170
--
--
--
Write Start Time3
tDW
-120
-150
-200
150
150
250
--
--
--
RES to Write Setup Time
tRP
-120
-150
-200
100
100
200
--
--
--
V
CC to RES Setup Time4
tRES
-120
-150
-200
1
1
3
--
--
--
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
11.10.03 REV 10
All data sheets are subject to change without notice
6
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
