Fo rc e -S e n s e S w it c h e s
/MAX456
ELECTRICAL CHARACTERISTICS—MAX4556 (±15V Supplies) (continued)
(V+ = +15V, V- = -15V, VL = 5V, GND = 0V, V
= 2.4V, V
= 0.8V, T = T
to T , unless otherwise noted. Typical values
MAX
IN_H
IN_L
A
MIN
are at T = +25°C.)
A
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
T
UNITS
A
60Ω ANALOG SWITCH (SENSE-GUARD)
V
,
COM_
, V
Analog Signal Range
On-Resistance
(Note 3)
= ±10V, I
C, E
V-
V+
V
Ω
V
NO_ NC_
+25°C
C, E
36
5
60
70
R
V
COM_
= 10mA
ON
COM_
+25°C
C, E
9
On-Resistance Match
(Note 4)
∆R
V
COM_
= ±10V, I
= 10mA
Ω
ON
COM_
10
+25°C
C, E
0.6
0.01
0.01
0.02
5
5
On-Resistance Flatness
(Note 5)
V
= +5V, 0V, -5V;
= 10mA
COM_
R
Ω
FLAT(ON)
I
COM_
6
+25°C
C, E
-0.25
-2.5
0.25
2.5
0.25
2.5
0.5
5.0
NO_, NC Off-Leakage
Current
I
,
V+ = 16.5V; V- = -16.5V;
= ±10V; V V
NO_, NC_
NO_(OFF)
±
nA
nA
I
V
COM_
=
=
10V
NC_(OFF)
+25°C
C, E
-0.25
-2.5
V+ = 16.5V; V- = -16.5V;
= ±10V; V
COM_ Off-Leakage Current
COM_ On-Leakage Current
I
COM_(OFF)
±
V
COM_
V
NO_, NC_
10V
+25°C
C, E
-0.5
V+ = 16.5V, V- = -16.5V,
I
nA
pC
COM_(ON)
V
COM_
= ±10V
-5.0
Charge Injection
Q
V
COM_
= 0, Figure 13
+25°C
LOGIC INPUT
IN_ Input Logic Threshold
High
V
C, E
C, E
C, E
1.6
1.6
2.4
0.5
V
V
IN_H
IN_ Input Logic Threshold
Low
V
IN_L
0.8
IN_ Input Current Logic
High or Low
I
,
IN_H
V
IN_
= 0 or VL
-0.5
0.03
µA
I
IN_L
SWITCH DYNAMIC CHARACTERISTICS
+25°C
C, E
150
125
250
300
225
275
V
= ±10V, R = 300Ω,
L
COM_
Transition Time (Force)
t
ns
TRANS
TRANS
Figure 10
+25°C
C, E
Transition Time
(Sense-Guard)
V
COM_
= ±10V, R = 1kΩ,
L
t
ns
ns
pF
Figure 10
Break-Before-Make Time
t
V
COM_
= ±10V, R = 1kΩ, Figure 12
+25°C
1
15
21
BBM
L
NO1, NC1 Off-Capacitance
(Force)
V
V
= GND; f = 1MHz;
NO1, NC1
Figure 14
C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
OFF
COM1 On-Capacitance
(Force)
V
COM1
= GND, f = 1MHz,
C
137
7
pF
pF
pF
%
ON
Figure 14
NO_, NC_ Off-Capacitance
(Sense-Guard)
V
V
= GND; f = 1MHz;
NO_, NC_
Figure 14
C
OFF
COM_ On-Capacitance
(Sense-Guard)
V
COM_
= GND, f = 1MHz,
C
30
ON
Figure 14
Total Harmonic Distortion
(Force)
THD
0.007
-30
R
IN
= 50Ω, R
= 50Ω, f = 1MHz,
OUT
Off Isolation (Force)
V
ISO
dB
V
COM_
= 100mV
, Figure 15
RMS
_______________________________________________________________________________________
9