3A, 1MHz, DDR Memory Termination Supply
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= V
CC
= 3.3V, V
EXTREF
= 1.1V,
T
A
= 0°C to +85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER
SS Source Current
SS Sink Current
SHDN
Input Current
SHDN
Logic Levels
Maximum Output RMS Current
V
IL
V
IH
I
OUT(RMS)
2
3.1
SYMBOL
I
SS
I
SS
V
SS
= 1V
V
SHDN
= 0, V
CC
CONDITIONS
MIN
4
1
-1
TYP
5
50
+1
0.8
MAX
6
UNITS
µA
mA
µA
V
A
RMS
MAX1809
ELECTRICAL CHARACTERISTICS
(V
IN
= V
CC
= 3.3V, V
EXTREF
= 1.1V,
T
A
= -40°C to +85°C,
unless otherwise noted.) (Note 4)
PARAMETER
Input Voltage
Feedback Voltage Accuracy
(V
FB
- V
EXTREF
)
External Reference Voltage
Range
Reference Voltage
PMOS Switch
On-Resistance
NMOS Switch
On-Resistance
Current-Limit Threshold
FB Input Bias Current
Off-Time
V
EXTREF
V
REF
R
PMOS
R
NMOS
I
LIMIT
I
FB
t
OFF
I
LX
= 0.5A
I
LX
= 0.5A
V
IN
> V
LX
V
FB
= V
EXTREF
+ 0.1V
R
TOFF
= 110kΩ
0.85
V
IN
= 4.5V
V
IN
= 3V
V
IN
= 4.5V
V
IN
= 3V
3.3
SYMBOL
V
IN
, V
CC
V
IN
= V
CC
= 3V to 5.5V, I
LOAD
= 0,
V
EXTREF
= 1.25V
V
IN
= V
CC
= 3 V to 5.5V
CONDITIONS
MIN
3.0
-24
V
REF
-
0.01V
1.067
TYP
MAX
5.5
+24
V
IN
-
1.9V
1.133
200
250
150
200
4.9
300
1.15
UNITS
V
mV
V
V
mΩ
mΩ
A
nA
µs
Note 2:
The output voltage will have a DC-regulation level lower than the feedback error comparator threshold by 50% of the ripple.
Note 3:
Recommended operating frequency, not production tested.
Note 4:
Specifications from 0°C to -40°C are guaranteed by design, not production tested.
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