Low-Cost, Multichemistry Battery-
Charger Building Block
Table 2. Component List
DESIGNATION
DESCRIPTION
DESIGNATION
DESCRIPTION
N-channel MOSFET
International Rectifier IRF7805 or
Fairchild FDS6680
22µF, 35V low-ESR tantalum capacitors
AVX TPSE226M035R0300 or
Sprague 593D226X0035E2W
C1, C2, C3, C4
N1
1µF, 50V ceramic capacitor (1210)
Murata GRM42-2X7R105K050
N-channel MOSFET
Fairchild FDS6612A
C5
N2
0.47µF, 25V ceramic capacitors (1210)
Murata GRM42-2X7R474K050
0.04Ω 1%, 1W resistor
Dale WSL-2512-R040-F or
IRC LR2512-01-R040-F
C6, C7
C9, C10
C12, C13
RS1
0.01µF ceramic capacitors (0805)
1µF, 10V ceramic capacitors (0805)
Taiyo Yuden LMK212BJ105MG
0.05Ω 1%, 1W resistor
Dale WSL-2512-R050-F or
IRC LR2512-01-R050-F
RS2
C11, C14, C15,
C16, C18, C19,
C20
0.1µF, 50V ceramic capacitors (0805)
Taiyo Yuden UMK212BJ104MG or
Murata GRM40-034X7R104M050
R5
R6
1kΩ 5% resistor (0805)
59.0kΩ 1% resistor (0805)
19.6kΩ 1% resistor (0805)
1MΩ 5% resistor (0805)
15.4kΩ 1% resistor (0805)
12.4kΩ 1% resistor (0805)
1Ω 5% resistors (0805)
33Ω 5% resistor (1206)
4.7Ω 5% resistors (1206)
29.4kΩ 1% resistor (0805)
10kΩ 1% resistors (0805)
R7
Schottky diode (DPAK)
STM-Microelectronics STPS8L30B or
ON Semiconductor MBRD630CT or
Toshiba U5FWK2C42
R8
D1
R9
R10
30V, 3A Schottky diode
Nihon EC31QS03L
R11, R12
R13
D2
D3, D4
L1
100mA Schottky diodes (SOT23)
Central Semiconductor CMPSH-3 or
Hitachi HRB0103A
R14, R15
R19
R20, R21, R22
22µH power inductor
Sumida CDRH127-220
Chip Information
TRANSISTOR COUNT: 2733
PROCESS: S12
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MAXIM [ MAXIM INTEGRATED PRODUCTS ]
