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MAX1649CSA 参数 Datasheet PDF下载

MAX1649CSA图片预览
型号: MAX1649CSA
PDF下载: 下载PDF文件 查看货源
内容描述: 5V / 3.3V或可调,高效率,低压差,降压型DC -DC控制器 [5V/3.3V or Adjustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管信息通信管理
文件页数/大小: 12 页 / 169 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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5 V/3 .3 V o r Ad ju s t a b le , Hig h -Effic ie n c y,  
Lo w -Dro p o u t , S t e p -Do w n DC-DC Co n t ro lle rs  
Table 1. Component Selection Guide  
PRODUCTION  
METHOD  
CURRENT-SENSE  
RESISTORS  
INDUCTORS  
CAPACITORS  
DIODES  
MOSFETS  
Sumida  
CDRH125-470 (1.8A) AVX  
CDRH125-220 (2.2A) TPS series  
Siliconix  
Little Foot series  
Motorola  
MBRS340T3  
Dale  
WSL Series  
Surface Mount  
Motorola  
medium-power  
surface-mount products  
CoilCraft  
DO3316-473 (1.6A)  
DO3340-473 (3.8A)  
Sprague  
595D series  
Nihon  
NSQ series  
IRC  
LRC series  
Sanyo  
Miniature  
Through-Hole  
Sumida  
OS-CON series  
IRC  
OAR series  
Motorola  
RCH875-470M (1.3A) low-ESR organic  
semiconductor  
Nichicon  
PL series  
low-ESR electrolytics  
Motorola  
1N5817 to  
1N5823  
Low-Cost  
Through-Hole  
CoilCraft  
PCH-45-473 (3.4A)  
Motorola  
TMOS power MOSFETs  
49/MAX651  
United Chemi-Con  
LXF series  
The peak current of Figure 1 is 2.35A for a 1.5A output.  
The inductor used in this circuit is specified to drop by  
10% at 2.2A (worst case); a curve provided by the  
manufacturer shows that the inductance typically drops  
by 20% at 2.7A. Using a slightly underrated inductor  
can sometimes reduce size and cost, with only a minor  
impact on efficiency.  
critical, but values should be less than 100nC for best  
efficiency. The MOSFET should be capable of handling  
the peak current and, for maximum efficiency, have a  
very low on-resistance at that current. Also, the on-  
resistance must be low for the minimum available V  
,
GS  
which equals V+(min). Select a transistor with an on-  
re s is ta nc e b e twe e n 50% a nd 100% of the c urre nt-  
sense resistor. The Si9430 transistor chosen for the  
Typical Operating Circuit has a drain-to-source rating  
of -20V and a typical on-resistance of 0.070at 2A with  
VGS = -4.5V. Tables 1 and 2 list suppliers of switching  
transistors suitable for use with these devices.  
Table 1 lists inductor types and suppliers for various  
applications. The efficiencies of the listed surface-  
mount inductors are nearly equivalent to those of the  
larger size through-hole versions.  
Dio d e S e le c t io n  
The MAX1649/MAX1651s high switching frequency  
demands a high-speed rectifier. Schottky diodes, such  
as the 1N5817 through 1N5823 (and their surface-  
mount e q uiva le nts ), a re re c omme nd e d . Choos e a  
diode with an average current rating equal to or greater  
Ca p a c it o r S e le c t io n  
Output Filter Capacitor  
The p rima ry c rite rion for s e le c ting the outp ut filte r  
capacitor is low equivalent series resistance (ESR),  
rather than high capacitance. An electrolytic capacitor  
with low e noug h ESR will a utoma tic a lly ha ve hig h  
enough capacitance. The product of the inductor-cur-  
re nt va ria tion a nd the outp ut filte r c a p a c itors ESR  
determines the amplitude of the high-frequency ripple  
s e e n on the outp ut volta g e . Whe n a 330µF, 10V  
Sprague surface-mount capacitor (595D series) with  
ESR = 0.15is used, 40mV of output ripple is typically  
observed when stepping down from 10V to 5V at 1A.  
The output filter capacitor's ESR also affects efficiency.  
Again, low-ESR capacitors perform best. Table 1 lists  
some suppliers of low-ESR capacitors.  
tha n I  
(ma x) a nd a volta g e ra ting hig he r tha n  
LIM  
V+(max).  
Ex t e rn a l S w it c h in g Tra n s is t o r  
The MAX1649/MAX1651 drive P-channel enhancement-  
mode MOSFET transistors only. The choice of power  
transistor is primarily dictated by the input voltage and  
the peak current. The transistors on-resistance, gate-  
source threshold, and gate charge must also be appro-  
p ria te ly c hos e n. The d ra in-to-s ourc e a nd g a te -to-  
source breakdown voltage ratings must be greater than  
V+. The total gate-charge specification is normally not  
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