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DS18B20-SL/T&R 参数 Datasheet PDF下载

DS18B20-SL/T&R图片预览
型号: DS18B20-SL/T&R
PDF下载: 下载PDF文件 查看货源
内容描述: [Serial Switch/Digital Sensor, 12 Bit(s), 0.50Cel, Rectangular, 3 Pin, Through Hole Mount, TO-92, 3 PIN]
分类和应用: 传感器换能器温度传感器输出元件
文件页数/大小: 22 页 / 243 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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DS18B20  
MEMORY  
The DS18B20’s memory is organized as shown in Figure 7. The memory consists of an SRAM  
scratchpad with nonvolatile EEPROM storage for the high and low alarm trigger registers (TH and TL)  
and configuration register. Note that if the DS18B20 alarm function is not used, the TH and TL registers  
can serve as general-purpose memory. All memory commands are described in detail in the DS18B20  
Function Commands section.  
Byte 0 and byte 1 of the scratchpad contain the LSB and the MSB of the temperature register,  
respectively. These bytes are read-only. Bytes 2 and 3 provide access to TH and TL registers. Byte 4  
contains the configuration register data, which is explained in detail in the Configuration Register section.  
Bytes 5, 6, and 7 are reserved for internal use by the device and cannot be overwritten.  
Byte 8 of the scratchpad is read-only and contains the CRC code for bytes 0 through 7 of the scratchpad.  
The DS18B20 generates this CRC using the method described in the CRC Generation section.  
Data is written to bytes 2, 3, and 4 of the scratchpad using the Write Scratchpad [4Eh] command; the data  
must be transmitted to the DS18B20 starting with the least significant bit of byte 2. To verify data  
integrity, the scratchpad can be read (using the Read Scratchpad [BEh] command) after the data is  
written. When reading the scratchpad, data is transferred over the 1-Wire bus starting with the least  
significant bit of byte 0. To transfer the TH, TL and configuration data from the scratchpad to EEPROM,  
the master must issue the Copy Scratchpad [48h] command.  
Data in the EEPROM registers is retained when the device is powered down; at power-up the EEPROM  
data is reloaded into the corresponding scratchpad locations. Data can also be reloaded from EEPROM to  
the scratchpad at any time using the Recall E2 [B8h] command. The master can issue read time slots  
following the Recall E2 command and the DS18B20 will indicate the status of the recall by transmitting 0  
while the recall is in progress and 1 when the recall is done.  
Figure 7. DS18B20 Memory Map  
SCRATCHPAD  
(POWER-UP STATE)  
Byte 0 Temperature LSB (50h)  
(85°C)  
Byte 1 Temperature MSB (05h)  
Byte 2 TH Register or User Byte 1*  
Byte 3 TL Register or User Byte 2*  
Byte 4 Configuration Register*  
Byte 5 Reserved (FFh)  
EEPROM  
TH Register or User Byte 1  
TL Register or User Byte 2  
Configuration Register  
Byte 6 Reserved  
Byte 7 Reserved (10h)  
Byte 8 CRC*  
*Power-up state depends on value(s) stored in EEPROM.  
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