DS18B20
AC ELECTRICAL CHARACTERISTICS—NV MEMORY
(-55°C to +100°C; VDD = 3.0V to 5.5V)
PARAMETER
NV Write Cycle Time
EEPROM Writes
SYMBOL
tWR
CONDITIONS
MIN
TYP
MAX
UNITS
ms
2
10
NEEWR
tEEDR
-55°C to +55°C
-55°C to +55°C
50k
10
writes
years
EEPROM Data Retention
AC ELECTRICAL CHARACTERISTICS
(-55°C to +125°C; VDD = 3.0V to 5.5V)
PARAMETER
SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES
9-bit resolution
10-bit resolution
11-bit resolution
12-bit resolution
Start Convert T
Command Issued
93.75
187.5
375
Temperature Conversion
Time
tCONV
ms
1
750
Time to Strong Pullup On
tSPON
tSLOT
tREC
tLOW0
tLOW1
tRDV
tRSTH
tRSTL
tPDHIGH
tPDLOW
CIN/OUT
10
µs
Time Slot
60
1
60
1
120
1
1
1
1
1
1
1,2
1
µs
µs
µs
µs
µs
µs
µs
µs
µs
pF
Recovery Time
Write 0 Low Time
Write 1 Low Time
Read Data Valid
Reset Time High
Reset Time Low
Presence-Detect High
Presence-Detect Low
Capacitance
120
15
15
480
480
15
60
240
25
60
1
NOTES:
1) See the timing diagrams in Figure 18.
2) Under parasite power, if tRSTL > 960µs, a power-on reset may occur.
Figure 17. Typical Performance Curve
DS18B20 Typical Error Curve
0.5
0.4
+3s Error
0.3
0.2
0.1
0
0
10
20
30
40
50
60
70
-0.1
-0.2
-0.3
-0.4
-0.5
Mean Error
-3s Error
Temperature (°C)
20 of 22
MAXIM [ MAXIM INTEGRATED PRODUCTS ]
