DA9316.003
March 23, 2005
ELECTRICAL CHARACTERISTICS
Static Performance
(test conditions Ta=+25C)
Parameter
Resolution
Integral Nonlinearity
1
Differential Nonlinearity
2
Gain error
Output Leakage Current
at IO1 (pin 16)
Offset Error
Temperature Stability
Symbol
N
INL
DNL
Gfse
Iilk
Conditions
Min
16
Typ
Max
Unit
s
Bits
±0.004
Relative accuracy 13 bits
Monotonic to 14 bits
Measured Using Internal Rfb
DAC
Register Loaded With All 1s
±0.003
±0.1
±0.006
±0.006
±0.2
10
±0.0005
%
%
%
nA
%
(test conditions Ta=+25C)
Parameter
Gain error
Integral Nonlinearity TC
Differential Nonlinearity TC
Reference Input
Symbol
TCTCGFSE
TCINL
TCDNL
Conditions
Min
Typ
±1.0
±0.1
±0.1
Max
±2.0
±0.5
±0.5
Unit
s
pm/C
pm/C
pm/C
(test conditions Ta=+25C)
Parameter
Input Resistance
Voltage Range
3
Switching Characteristics
Symbol
Rref
Conditions
Min
2.5
Typ
5
Max
7.5
±25
Unit
s
kΩ
v
(test conditions Ta=+25C)
Parameter
Strobe Width
Data Setup Time
Data Hold Time
Symbol
t
SW
t
DS
t
DH
Conditions
HBE and LBE Inputs
Bit 1 to Bit 16
Bit 1 to Bit 16
Min
80
80
40
Typ
60
70
20
Max
Unit
s
ns
ns
ns
NOTES:
1. Integral Nonlinearity is measured as the arithmetic
mean value of magnitudes of the greatest positive
deviation and the greatest negative deviation from the
theoretical value of any given input combination.
2. Differential Nonlinearity DNL is the deviation of an
output step from the theoretical value of 1 LSB for any
two adjacent digital input codes.
3.Guaranteed by design but not production tested.
4.Logic inputs are MOS gates. Iin typical is less than 1
nA at 25C.
4