DA9283.006
13 July 2006
PIN DESCRIPTION
Pin Description
Symbol
x-coordinate
y-coordinate
Crystal Oscillator Output
Voltage Control Input
X2
VC
186
372
543
149
330
500
919
142
142
142
920
920
920
920
Power Supply Ground
VSS
X1
Crystal/Varactor Oscillator Input
Output Buffer Power Down Control
Power Supply Voltage
Buffer Output
PD
VDD
OUT
Note: Because the substrate of the die is internally connected to GND, the die has to be connected to GND or
left floating. Please make sure that GND is the first pad to be bonded. Pick-and-place and all component
assembly are recommended to be performed in ESD protected area.
Note: Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The
coordinates may vary depending on sawing width and location. However, the distances between pads are
accurate.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Min
Max
Unit
Note
Supply Voltage
VDD - VSS
-0.3
5.5
V
V
Input Pin Voltage
Power Dissipation (max)
Storage Temperature
ESD Rating
VSS -0.3 VDD + 0.3
100
PMAX
TST
mW
oC
-55
150
2
HBM
kV
RECOMMENDED OPERATION CONDITIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Note
Supply Voltage
VDD
For 3.3 V / 5.0 V
versions
2.5
3.3
5.3
V
1)
For 3.3 V versions
VDD = 2.8 V
2.5
-40
3.3
3.2
4.0
1, 2)
3)
Supply Current
IDD
TOP
mA
oC
Operating Temperature
+85
Voltage Control Line
Impedance
Crystal Pulling Sensitivity
ZVC,LINE
1
MΩ
S
30
10
ppm/pF
pF
Crystal Load Capacitance
CL
VC = 1.65 V
4)
Note 1: It is recommended to connect a 1 nF capacitor between the VDD and VSS pins.
Note 2: For 3.3 V versions MAS9283AA-AE, MAS9283AN-AR.
Note 3: Value at 15MHz. At 40MHz IDD is typically 5.8 mA.
Note 4: MAS9283AG – AL has a typical crystal load capacitance of 8.5 pF when VC = 2.5 V. MAS9283AT – AX
has a typical crystal load capacitance of 9 pF when VC = 2.5 V.
2 (14)