DA9078.003
28 January 2004
PAD LAYOUT
1702 µm
PDN
VSS RFI
MAS
AON DEC
1778 µm
9078Bx
VDD
QO QI AGC
OUT
DIE size = 1.70 x 1.78 mm; PAD size = 100 x 100 µm
Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or
left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component
assembly are recommended to be performed in ESD protected area.
Note: Coordinates are pad center points where origin has been located in the center of VDD pad
Note: The on-chip product code 9078Bx identifies internal compensation capacitance option. x has values 1, 2,
3, 4 or 5 refering to capacitance option described in the Table 2 on page 4.
Pin Description
Name
X-coordinate
Y-coordinate
Note
Power Supply Voltage
Quarz Filter Output
Quarz Filter Input
AGC Capacitor
VDD
0 µm
306 µm
586 µm
866 µm
1109 µm
1109 µm
866 µm
549 µm
306 µm
16 µm
0 µm
19 µm
QO
QI
19 µm
AGC
OUT
DEC
AON
PDN
RFI
19 µm
19 µm
1428 µm
1428 µm
1428 µm
1428 µm
1407 µm
Receiver Output
1
Demodulator Capacitor
AGC On Control
2
3
Power Down Input
Receiver Input
Power Supply Ground
VSS
Notes:
1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced
(modulated)
-
-
the output is a current source/sink with |IOUT| > 5 µA
at power down the output is pulled to VSS (pull down switch)
2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)
-
Internal pull-up with current < 1 µA which is switched off at power down
3) PDN = VSS means receiver on; PDN = VDD means receiver off
-
Fast start-up is triggered when the receiver is after power down (PDN=VDD) controlled to power up
(PDN=VSS) i.e. at the falling edge of PDN signal.
2 (10)