DA6512.003
2 December, 2016
FUNCTIONAL DESCRIPTION
In battery operated applications the VDD of the
MAS6512 can vary along with battery capacity. In
such case the VDD level monitoring feature can be
useful to indicate battery level, help choosing
between different power modes in the system or
even using measured VDD level for compensating
VDD dependencies. In the VDD level monitoring
mode the on-chip regulator has to be disabled.
example 10-bit addressing, arbitration and clock
stretching features of the I2C bus specification.
The XCLR pin can be used to hard reset the device
including the serial communication. However device
reset is possible also via serial bus using the reset
register. Despite of on chip power on reset (POR)
circuit it is recommended to reset the device
manually after every power up to guarantee proper
register settings after any VDD rise conditions.
Communication with MAS6512 is handled by the
serial interface compatible with either
directional 2-wire I2C bus or a 4-wire SPI bus. The
XSPI pin is for selecting which bus type is used.
a
bi-
The EOC pin indicates if a conversion has finished
and the result is ready to be read from the memory
via the serial interface. Using the EOC signal is not
necessary since it is alternatively possible to wait at
least maximum conversion time period before
reading out the result.
Note: The 2-wire I2C bus of MAS6512 supports only
basic I2C bus communication protocol but not for
ABSOLUTE MAXIMUM RATINGS
All Voltages with Respect to Ground
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
VDD
-0.3
-0.3
-100
5.0
V
V
Voltage Range for All Pins
Latchup Current Limit
VDD + 0.3
+100
ILUT
For all pins, test according to
JESD78A.
mA
Junction Temperature
Storage Temperature
TJmax
TS
+ 150
+125
°C
°C
Note 1
- 55
Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming
and calibration data retention time.
Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum
operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions
for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute
maximum ratings may be destructive to the devices.
Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).
RECOMMENDED OPERATION CONDITIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Capacitance and VDD level
monitoring modes
Note 1
Supply Voltage
VDD
1.8
2.7
3.6
V
Temperature mode
Note 1
1.9
2.7
3.6
V
Operating Temperature
TA
TA
-40
+25
+25
+85
+40
°C
°C
EEPROM Write
Temperature
Note 2
+10
Note 1. In capacitance measurement and VDD level monitoring the regulator must be disabled (TEMPREGEN=0) which allows operation
down to 1.8V. In temperature measurement the typ 1.8V regulator has to be enabled (TEMPREGEN=1) which limits the minimum supply
voltage down to 1.9V.
Note 2: EEPROM write operation is recommended to be done at room temperature
3 (32)
MAS [ MICRO ANALOG SYSTEMS ]
