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MAS6505BA1WAB05 参数 Datasheet PDF下载

MAS6505BA1WAB05图片预览
型号: MAS6505BA1WAB05
PDF下载: 下载PDF文件 查看货源
内容描述: [Piezoresistive Sensor Signal Interface IC]
分类和应用:
文件页数/大小: 44 页 / 1063 K
品牌: MAS [ MICRO ANALOG SYSTEMS ]
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DA6505.005  
11 June 2018  
EEPROM WRITE PROCEDURE  
This chapter gives instructions for writing data to the  
EEPROM memory.  
triggers power-on-reset (POR) but to make sure the  
device is reset it is recommended to give an  
additional reset by writing any data byte on the reset  
register (EC/6CHEX) via the serial bus.  
The 512-bit (64 byte) EEPROM memory is available  
for storing trimming and calibration data on chip. The  
first 464-bits (58 bytes) in addresses 80/00HEX  
The EEPROM is activated and write enabled by  
writing value 0AHEX to the EEPROM control register  
(ED/6DHEX). After activating EEPROM there need to  
be a wait of at least 0.2 ms before reading from or  
writing to EEPROM.  
B9/39HEX are free for any use such as storing sensor  
calibration coefficients. The last six EEPROM bytes  
in addresses BA/3AHEX BF/3FHEX are reserved for  
trimming purposes. See table 1 describing register  
and EEPROM data addresses.  
Next the data can be written to the EEPROM  
memory addresses one byte (8-bit) at a time. It is  
necessary to have a delay of minimum 13ms after  
programming each byte (8-bit). The success of each  
write can be verified by reading back the data byte  
(8-bit) and comparing it to the original byte (8-bit).  
Writing to the non-volatile EEPROM memory  
requires supply voltage of 5.0V (VDD=4.5V…5.5V).  
See write/read application figure 4 below. However  
note that the EEPROM read is possible at wide  
supply voltage range VDD=1.71V…5.5V.  
The EEPROM write procedure is shown on the next  
page figure 5.  
After all data bytes are written the EEPROM memory  
is inactivated and protected from write by writing  
00HEX to the EEPROM control register (ED/6DHEX).  
In the beginning of the EEPROM write procedure the  
initial conditions need to be reset. Connecting VDD  
OPTIONAL TEMPERATURE  
SENSING DIODE  
+5V  
VDDIO  
CVDDIO  
100nF  
CVDD  
10µF  
VDDIO  
VDD  
RP  
4.7k  
TD  
VDD  
VDDIO  
OSC  
EEPROM  
VDDS  
PI  
RP  
4.7k  
REG  
VREFP  
GND  
AFE  
P
T
SENSOR  
SDI  
I/O  
SDO  
ADC  
CONTROL  
P
NI  
I2C/  
SPI  
SCK  
CSB  
I/O  
T
VDDS  
GNDS  
VREFN  
R3  
R1  
TEST  
MUX  
SDO  
R4  
R2  
MCU  
T
P
T
MAS6505  
GND  
GND  
GND  
GND  
NOTE: In I2C bus communication the CSB pin is unused and left unconnected (floating). It has an internal pull up to VDDIO.  
Figure 4. Typical EEPROM write/read application circuit (VDD=+5V) in I2C bus communication  
27 (44)  
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