SESD0402X1BN-0010-098 参数 Datasheet PDF下载

TE Connectivity

Single-channel Silicon ESD Protection Devices

DEVICE ELECTRICAL CHARACTERISTICS

Device Maximum Ratings

IEC 61000-4-2, level 4

(ESD withstand)

Devices

SESD0201X1BN-0010-098

(1)

(1)

Temperature

Operating (°C)

Storage (°C)

Peak Current

(tp=8x20µs)

Ipp (A)

Contact (kV)

Air (kV)

SESD0402X1BN-0010-098

SESD0201X1UN-0020-090

(2)

SESD0402X1UN-0020-090

(2)

20

20

-55 to +125

-55 to +150

2.0

Caution: Stress exceeding Device Maximum Ratings may damage the device.

Prolong exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Device Electrical Characteristics @ T=25°C

Input Capacitance

(3)

Devices

SESD0201X1BN-0010-098

(1)

SESD0402X1BN-0010-098

(1)

Breakdown Voltage

(typ)

V

br

@ I

t

= 1mA (V)

+9.80 / -9.80

Reverse Leakage Current

(typ)

I

L

@ V

RWM

= 5.0V (nA)

Clamping Voltage

(typ)

V

CL

@ Ipp = 2.0A (V)

+10.0 / -10.0

Typical (pF)

0.10

Maximun (pF)

0.12

SESD0201X1UN-0020-090

(2)

SESD0402X1UN-0020-090

(1)

50.0

0.20

(3)

0.22

+9.00 / -0.80

+9.20 / -0.80

(2)

Bi-directional

(2)

Uni-directional

@ Vr = 0V, f = 3GHz

DEVICE IV CHARACTERISTICS

SESD Bi-directional

SESD Bi-directional IV IV

1.0 1.0

0.8 0.8

0.6 0.6

1.0 1.0

0.8 0.8

0.6 0.6

SESD Uni-directional

SESD Uni-directional IV IV

Current (mA)

Current (mA)

0.2 0.2

-4 -4 -2 -2

0

0 0

-0.2-0.2

0

2

2

4

4

6

6

8

8

10 10

Current (mA)

Current (mA)

0.4 0.4

0.4 0.4

0.2 0.2

0

-1 0

0 1

1

2

2 3

3 4

4 5

5

6

6 7

7 8

8 9

9 10 10

-10 -10 -8 -8 -6 -6

0

-2 -2 -1

-0.2-0.2

-0.4

-0.4

-0.6-0.6

-0.8-0.8

-1.0 -1.0

-0.4

-0.4

-0.6-0.6

-0.8-0.8

-1.0 -1.0

Voltage (V)

Voltage (V)

Voltage (V)

Voltage (V)

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