Radar Pulsed Power Transistor, 100 Watts,
1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty
8/21/02
Rev. 3
PH1214-100EL
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings at 25 °C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +45 °C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
j
Rating
70
3.0
14.1
214
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Characteristics at 25 °C
Parameter
Collector-Emitter Breakdown
Collector-Emitter Leakage
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Overdrive Stability
Load Mismatch Tolerance
Load Mismatch Stability
Symbol
BV
CES
I
CES
R
TH(JC)
P
O
G
P
Min.
70
-
-
100
6.0
52
8
-
-
-
Max.
-
10
0.7
-
-
-
-
+1.0
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
dB
-
-
I
C
=50 mA
V
CE
=28 V
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
V
CC
=28 V, P
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
Test Conditions
η
RL
OD-S
VSWR-T
VSWR-S
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